NXP Semiconductors - BUK9608-55,118

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BUK9608-55,118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK9608-55,118
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation Ambient: 187 W; Maximum Turn Off Time (toff): 435 ns; No. of Terminals: 2;
Datasheet BUK9608-55,118 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 230 ns
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 240 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 435 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 187 W
Maximum Drain-Source On Resistance: .008 ohm
Avalanche Energy Rating (EAS): 500 mJ
Other Names: 934045270118
BUK9608-55 /T3
BUK9608-55 /T3-ND
Maximum Feedback Capacitance (Crss): 480 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
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