NXP Semiconductors - CLF1G0035S-100,112

  1. Home
  2. NXP Semiconductors - CLF1G0035S-100,112
CLF1G0035S-100,112 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number CLF1G0035S-100,112
Description N-CHANNEL; Maximum Operating Temperature: 250 Cel;
Datasheet CLF1G0035S-100,112 Datasheet
NAME DESCRIPTION
Maximum Operating Temperature: 250 Cel
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

934055611215 by NXP Semiconductors

934055611215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G4;
BLA8G1011L-300G by NXP Semiconductors

BLA8G1011L-300G

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
BF245C by National Semiconductor

BF245C

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; JESD-609 Code: e0;
BF998B-GS08 by Vishay Telefunken

BF998B-GS08

Vishay Telefunken

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
BF990AR-T by NXP Semiconductors

BF990AR-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 18 V;
TGF2023-2-01 by Triquint Semiconductor

TGF2023-2-01

Triquint Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED; No. of Elements: 1;
2N5484RLRA by Onsemi

2N5484RLRA

Onsemi

2N5484RLRA by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance with 0.03 A ID. Featuring JUNCTION tech and 1 pF Crss, this THROUGH-HOLE transistor has a CYLINDRICAL package ideal for RF circuits.
2N3819/D74Z by National Semiconductor

2N3819/D74Z

National Semiconductor

2N3819/D74Z by National Semiconductor is an N-CHANNEL RF FET with 3 terminals. It operates in DEPLETION MODE and has a Max Feedback Capacitance of 4 pF. Ideal for AMPLIFIER applications due to its SILICON element material and CYLINDRICAL package style.
BF1211R by NXP Semiconductors

BF1211R

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
2N5484ZL1 by Onsemi

2N5484ZL1

Onsemi

2N5484ZL1 by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a max ID of 0.03 A and Crss of 1 pF. This JUNCTION FET operates in the ULTRA HIGH FREQUENCY BAND with a CYLINDRICAL package shape.
BF244BZL1 by Onsemi

BF244BZL1

Onsemi

BF244BZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF513TRL13 by NXP Semiconductors

BF513TRL13

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; JESD-30 Code: R-PDSO-G3; Transistor Application: AMPLIFIER;
BF556CT/R by NXP Semiconductors

BF556CT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
BF996S-T by NXP Semiconductors

BF996S-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Operating Mode: DUAL GATE, DEPLETION MODE; Qualification: Not Qualified;
J308RL1 by Onsemi

J308RL1

Onsemi

J308RL1 by Onsemi is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
3SK265 by Onsemi

3SK265

Onsemi

N-CHANNEL; Maximum Drain Current (Abs) (ID): .03 A; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Power Dissipation Ambient: .2 W;
J310 by National Semiconductor

J310

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 3;
3N212 by Texas Instruments

3N212

Texas Instruments

3N212 by Texas Instruments is a N-CHANNEL FET with 27V DS Breakdown Voltage, suitable for AMPLIFIER applications. Operating in DUAL GATE mode, it offers 0.05A Drain Current and 0.36W Power Dissipation. Ideal for VERY HIGH FREQUENCY BAND circuits due to its METAL-OXIDE SEMICONDUCTOR technology.
MMBFJ305 by Onsemi

MMBFJ305

Onsemi

Onsemi's MMBFJ305 is an N-CHANNEL RF FET in a PLASTIC/EPOXY package. It operates in DEPLETION MODE with a max power dissipation of 0.225W, suitable for AMPLIFIER applications. With GULL WING terminals and SILICON element material, it can handle up to 150°C operating temperature.
BLC8G27LS-180AV by NXP Semiconductors

BLC8G27LS-180AV

NXP Semiconductors

RF Small Signal Field-Effect Transistors;