NXP Semiconductors - PDTA123JS,126

PDTA123JS,126 by NXP Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PDTA123JS,126
Description	Limited Part Number Data;
Datasheet	PDTA123JS,126 Datasheet

PDTA123JS,126 Technical Details

NAME	DESCRIPTION
Other Names:	PDTA123JS AMO-ND PDTA123JS AMO 934057560126
Category:	Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):	100 mA
Resistor - Base (R1):	2.2 kOhms
Vce Saturation (Max) @ Ib, Ic:	100mV @ 250µA, 5mA
Mounting Type:	Through Hole
Voltage - Collector Emitter Breakdown (Max):	50 V
Supplier Device Package:	TO-92-3
Standard Package:	2,000
Transistor Type:	PNP - Pre-Biased
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max:	500 mW
Packaging:	Tape & Box (TB)
Resistor - Emitter Base (R2):	47 kOhms
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 5V
Base Product Number:	PDTA123
Moisture Sensitivity Level (MSL):	1 (Unlimited)

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