Image shown is a representation only.
| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PDTC115ES,126 |
| Description | Limited Part Number Data; |
| Datasheet | PDTC115ES,126 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
PDTC115ES AMO-ND 934057567126 PDTC115ES AMO |
| Category: |
Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors |
| Current - Collector (Ic) (Max): | 20 mA |
| Resistor - Base (R1): | 100 kOhms |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Mounting Type: | Through Hole |
| Voltage - Collector Emitter Breakdown (Max): | 50 V |
| Supplier Device Package: | TO-92-3 |
| Standard Package: | 2,000 |
| Transistor Type: | NPN - Pre-Biased |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Power - Max: | 500 mW |
| Packaging: | Tape & Box (TB) |
| Resistor - Emitter Base (R2): | 100 kOhms |
| Current - Collector Cutoff (Max): | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
| Base Product Number: | PDTC115 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
