NXP Semiconductors - PDTD113ZK,115

PDTD113ZK,115 by NXP Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PDTD113ZK,115
Description	Limited Part Number Data;
Datasheet	PDTD113ZK,115 Datasheet

PDTD113ZK,115 Technical Details

NAME	DESCRIPTION
Other Names:	934058969115 PDTD113ZK T/R PDTD113ZK T/R-ND
Category:	Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):	500 mA
Resistor - Base (R1):	1 kOhms
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Mounting Type:	Surface Mount
Voltage - Collector Emitter Breakdown (Max):	50 V
Supplier Device Package:	SMT3; MPAK
Standard Package:	3,000
Transistor Type:	NPN - Pre-Biased
Package / Case:	TO-236-3, SC-59, SOT-23-3
Power - Max:	250 mW
Packaging:	Tape & Reel (TR)
Resistor - Emitter Base (R2):	10 kOhms
Current - Collector Cutoff (Max):	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 50mA, 5V
Base Product Number:	PDTD113
Moisture Sensitivity Level (MSL):	1 (Unlimited)

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