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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PDTD123YS,126 |
| Description | Limited Part Number Data; |
| Datasheet | PDTD123YS,126 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
PDTD123YS AMO-ND 934059147126 PDTD123YS AMO |
| Category: |
Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors |
| Current - Collector (Ic) (Max): | 500 mA |
| Resistor - Base (R1): | 2.2 kOhms |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
| Mounting Type: | Through Hole |
| Voltage - Collector Emitter Breakdown (Max): | 50 V |
| Supplier Device Package: | TO-92-3 |
| Standard Package: | 2,000 |
| Transistor Type: | NPN - Pre-Biased |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Power - Max: | 500 mW |
| Packaging: | Tape & Box (TB) |
| Resistor - Emitter Base (R2): | 10 kOhms |
| Current - Collector Cutoff (Max): | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
| Base Product Number: | PDTD123 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
