PHB110NQ08LT,118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHB110NQ08LT,118
Description Limited Part Number Data;
Datasheet PHB110NQ08LT,118 Datasheet
NAME DESCRIPTION
Other Names: 934058281118
PHB110NQ08LT /T3-ND
PHB110NQ08LT /T3
Operating Temperature: -55°C ~ 175°C (TJ)
Category: Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6631 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 127.3 nC @ 10 V
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Standard Package: 800
Drain to Source Voltage (Vdss): 75 V
Series: TrenchMOS™
Power Dissipation (Max): 230W (Tc)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Product Number: PHB11
Moisture Sensitivity Level (MSL): 1 (Unlimited)