PMWD19UN,518 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PMWD19UN,518
Description Limited Part Number Data;
Datasheet PMWD19UN,518 Datasheet
NAME DESCRIPTION
Other Names: 934057598518
568-2361-6
PMWD19UN518
PMWD19UN /T3
568-2361-1
568-2361-2
Operating Temperature: -55°C ~ 150°C (TJ)
FET Feature: Logic Level Gate
Category: Discrete Semiconductor Products
Transistors FETs, MOSFETs FET, MOSFET Arrays
Configuration: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
Standard Package: 2,500
Drain to Source Voltage (Vdss): 30V
Series: TrenchMOS™
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 5.6A
Base Product Number: PMWD19
Moisture Sensitivity Level (MSL): 1 (Unlimited)