Onsemi - 1S553T-HP

The Toshiba 1SV285(TPH3,F) is a Varactor Diode with 4.5 pF capacitance, 10 V peak reverse voltage, and abrupt classification. It is a surface-mount diode in small outline package suitable for RF tuning applications.

1N5456A by Onsemi is a varactor diode with 175 min. quality factor, 100 pF nominal capacitance, and 30 V min. breakdown voltage. Ideal for ultra-high frequency applications due to its abrupt variable capacitance classification. Package: Glass, Config: Single, Terminals: 2.

LV2209ZL1 by Onsemi is a single varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 25V. It is used in applications requiring variable capacitance control at temperatures up to 150 °C.

BBY31TRL13 by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a 3-terminal gull-wing configuration in a small rectangular package, made of plastic/epoxy. Ideal for RF tuning and voltage-controlled oscillators, it ensures efficient performance in compact designs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 20; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 2.7 pF; Maximum Repetitive Peak Reverse Voltage: 22 V; Minimum Quality Factor: 2000;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB240 by NXP Semiconductors is a variable capacitance diode ideal for VHF to UHF applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a breakdown voltage of 32 V. This glass-packaged component is perfect for tuning circuits.

NXP Semiconductors' BB201,215 is a varactor diode with 95pF capacitance and 15V peak reverse voltage. Commonly used in RF applications due to its variable capacitance feature, it operates b/w -55°C to 125°C. This small outline diode has a gull wing terminal form and is surface mountable for easy integration.

MV209RLRA by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this cylindrical diode has a max power dissipation of 0.2 W, making it suitable for RF tuning circuits.

SMV1253-040LF by Skyworks Solutions is a single hyperabrupt varactor diode with 53pF nominal capacitance, -55 to 125°C operating range, and 15V breakdown voltage. It is used in applications requiring variable capacitance diodes for RF tuning in surface mount configurations.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MV2109 by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode has a breakdown voltage of 30 V and is classified as an abrupt variable capacitance diode with through-hole terminal form.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 20;

MV104RL1 by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 39.5 pF nominal capacitance. It operates at up to 125 °C and has a min breakdown voltage of 32V. Ideal for applications requiring variable capacitance diodes in cylindrical packages.

VARIABLE CAPACITANCE DIODE; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Diode Element Material: SILICON; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;