BMS3004-1E by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	BMS3004-1E
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Drain-Source On Resistance: .0114 ohm; Maximum Drain Current (ID): 68 A;
Datasheet	BMS3004-1E Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	380 mJ
Other Names:	BMS3004-1E-ND BMS3004-1EOS
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	68 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	272 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	NO
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	75 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.0114 ohm

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