Onsemi - NTD5865N-1G

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NTD5865N-1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTD5865N-1G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 36 mJ; Transistor Element Material: SILICON;
Datasheet NTD5865N-1G Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 38 A
Maximum Pulsed Drain Current (IDM): 137 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .018 ohm
Avalanche Energy Rating (EAS): 36 mJ
Other Names: NTD5865N-1G-ND
2156-NTD5865N-1G-ON
ONSONSNTD5865N-1G
NTD5865N-1GOS
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
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