Onsemi - NTLJF3118NTAG

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NTLJF3118NTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTLJF3118NTAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .065 ohm;
Datasheet NTLJF3118NTAG Datasheet
NAME DESCRIPTION
Other Names: ONSONSNTLJF3118NTAG
2156-NTLJF3118NTAG
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.6 A
Maximum Pulsed Drain Current (IDM): 18 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-XDSO-C6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .065 ohm
Moisture Sensitivity Level (MSL): 1
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