Onsemi - NTMFS4945NT1G

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NTMFS4945NT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFS4945NT1G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet NTMFS4945NT1G Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7.4 A
Maximum Pulsed Drain Current (IDM): 104 A
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 5
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .013 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 26.5 mJ
Other Names: 2156-NTMFS4945NT1G
2156-NTMFS4945NT1G-ONTR-ND
ONSONSNTMFS4945NT1G
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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