Onsemi - NVH4L015N065SC1

NVH4L015N065SC1 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVH4L015N065SC1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 753 W; Maximum Operating Temperature: 175 Cel; Minimum Operating Temperature: -55 Cel;
Datasheet NVH4L015N065SC1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 164 A
Maximum Pulsed Drain Current (IDM): 859 A
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): 753 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Moisture Sensitivity Level (MSL): 1
Other Names: 488-NVH4L015N065SC1-ND
5556-NVH4L015N065SC1
488-NVH4L015N065SC1
Maximum Feedback Capacitance (Crss): 39.33 pF
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 650 V
Maximum Drain Current (Abs) (ID): 164 A
Peak Reflow Temperature (C): 260
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