Onsemi - NVMFD5489NLT3G

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NVMFD5489NLT3G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVMFD5489NLT3G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 23.4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3; Maximum Drain Current (ID): 12 A;
Datasheet NVMFD5489NLT3G Datasheet
NAME DESCRIPTION
Other Names: ONSONSNVMFD5489NLT3G
2156-NVMFD5489NLT3G
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 12 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 23.4 W
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 12 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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