Renesas Electronics - 2SK3811-ZP-E1-AY

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2SK3811-ZP-E1-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK3811-ZP-E1-AY
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 213 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 110 A;
Datasheet 2SK3811-ZP-E1-AY Datasheet
NAME DESCRIPTION
Other Names: 2SK3811-ZP-E1-AY-ND
2SK3811-ZP-E1-AYTR
2SK3811-ZP-E1-AYDKR
2SK3811ZPE1AY
2SK3811-ZP-E1-AYCT
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 110 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Power Dissipation (Abs): 213 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 110 A
Peak Reflow Temperature (C): NOT SPECIFIED
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