Renesas Electronics - 2SK4151TZ-E

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2SK4151TZ-E by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK4151TZ-E
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
Datasheet 2SK4151TZ-E Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
JEDEC-95 Code: TO-92
Maximum Pulsed Drain Current (IDM): 4 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .0025 ohm
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