STMicroelectronics - RF2L16180CB4

  1. Home
  2. STMicroelectronics - RF2L16180CB4
RF2L16180CB4 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number RF2L16180CB4
Description RF Power Field-Effect Transistors;
Datasheet RF2L16180CB4 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

RF5L15120CB4 by STMicroelectronics

RF5L15120CB4

STMicroelectronics

RF Power Field-Effect Transistors;
BLF6G15L-250PBRN by NXP Semiconductors

BLF6G15L-250PBRN

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; Maximum Drain Current (ID): 64 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
MRF136Y by Tyco Electronics M/a-com

MRF136Y

Tyco Electronics M/a-com

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; No. of Elements: 2;
934064687112 by NXP Semiconductors

934064687112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; No. of Terminals: 6; Package Shape: SQUARE;
A3T21H455W23SR6 by NXP Semiconductors

A3T21H455W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
FLU35XM by Fujitsu

FLU35XM

Fujitsu

FLU35XM by Fujitsu is a N-CHANNEL RF FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. Ideal for L BAND applications, it features 15W Power Dissipation, GALLIUM ARSENIDE technology, and can withstand up to 175°C.
MRF1517NT1 by Freescale Semiconductor

MRF1517NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
934065606112 by NXP Semiconductors

934065606112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 1; Terminal Form: FLAT;
BLF6G15L-500H by NXP Semiconductors

BLF6G15L-500H

NXP Semiconductors

BLF6G15L-500H by NXP is an N-channel RF power FET designed for switching applications. It features a 100V min DS breakdown voltage, operates in the L band, and supports a max drain current of 45A. Ideal for high-frequency amplification in communication systems.
BLF6G27-10G by Ampleon Netherlands B V

BLF6G27-10G

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDSO-G2; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Form: GULL WING;
MRFE6VP100HR5 by NXP Semiconductors

MRFE6VP100HR5

NXP Semiconductors

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD57070 by STMicroelectronics

PD57070

STMicroelectronics

PD57070 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
934065607112 by NXP Semiconductors

934065607112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Case Connection: SOURCE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
RF2L36040CF2 by STMicroelectronics

RF2L36040CF2

STMicroelectronics

RF Power Field-Effect Transistors;
MRF176GU by M/a-com Technology Solutions

MRF176GU

M/a-com Technology Solutions

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 400 W; Package Style (Meter): FLANGE MOUNT; Transistor Application: AMPLIFIER;
TRF7003PKR by Texas Instruments

TRF7003PKR

Texas Instruments

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BLF177 by NXP Semiconductors

BLF177

NXP Semiconductors

BLF177 by NXP Semiconductors is a single N-channel RF Power FET with 125V DS breakdown voltage, suitable for amplifier applications in the VHF band. It features a max drain current of 16A, power dissipation of 220W, and operates in enhancement mode. The package is ceramic-metal sealed co-fired with flange mount style and radial terminal position.
MRF134 by Motorola

MRF134

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .9 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STAC3933 by STMicroelectronics

STAC3933

STMicroelectronics

STAC3933 by STMicroelectronics is a N-CHANNEL RF Power FET with 20A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C. This SINGLE configuration FET uses METAL-OXIDE SEMICONDUCTOR technology and is surface mountable.
TIM0910-8 by Toshiba

TIM0910-8

Toshiba

Toshiba's TIM0910-8 is an N-channel RF Power FET with 15V DS breakdown voltage, suitable for X-band applications. Featuring a single configuration, it has a max drain current of 10.4A and can handle up to 60W power dissipation at 175°C operating temperature. Ideal for high-frequency amplification in various electronic systems.