STMicroelectronics - STAC1214-350

  1. Home
  2. STMicroelectronics - STAC1214-350
STAC1214-350 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STAC1214-350
Description RF Power Field-Effect Transistors;
Datasheet STAC1214-350 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

CLF1G0035-100,112 by Ampleon Netherlands B V

CLF1G0035-100,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Reference Standard: IEC-60134; Highest Frequency Band: S BAND;
MRF141G by Tyco Electronics M/a-com

MRF141G

Tyco Electronics M/a-com

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Peak Reflow Temperature (C): NOT SPECIFIED;
GS61008P-TR by Gan Systems

GS61008P-TR

Gan Systems

GS61008P-TR by Gan Systems is an N-channel RF FET for switching applications. It operates in enhancement mode with a max drain current of 90A. With GaN element material, it offers high frequency band performance suitable for very high frequency applications.
TGF4212XCCX by Texas Instruments

TGF4212XCCX

Texas Instruments

TGF4212XCCX by Texas Instruments is an N-CHANNEL RF Power FET for amplifier applications. Operating in DEPLETION MODE, it offers a Min DS Breakdown Voltage of 10V and works in the KU BAND frequency range. This RECTANGULAR chip with GALLIUM ARSENIDE technology has 4 terminals and is surface mountable.
PTFA220041MV4 by Wolfspeed

PTFA220041MV4

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: SQUARE; Minimum DS Breakdown Voltage: 65 V; Highest Frequency Band: S BAND;
MRF136Y by Motorola

MRF136Y

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
MRF6VP11KHR5 by NXP Semiconductors

MRF6VP11KHR5

NXP Semiconductors

N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
MRF8P20165WHSR5 by Freescale Semiconductor

MRF8P20165WHSR5

Freescale Semiconductor

MRF8P20165WHSR5 by Freescale is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the S BAND, has a 65V DS Breakdown Voltage, and can be used as an AMPLIFIER. The package is RECTANGULAR, made of CERAMIC/METAL, and supports surface mount technology.
934061173135 by NXP Semiconductors

934061173135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Highest Frequency Band: S BAND; Transistor Application: AMPLIFIER;
BLF6G15L-500H by NXP Semiconductors

BLF6G15L-500H

NXP Semiconductors

BLF6G15L-500H by NXP is an N-channel RF power FET designed for switching applications. It features a 100V min DS breakdown voltage, operates in the L band, and supports a max drain current of 45A. Ideal for high-frequency amplification in communication systems.
A2T21H450W19SR6 by NXP Semiconductors

A2T21H450W19SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
MRF8P20140WHSR5 by Freescale Semiconductor

MRF8P20140WHSR5

Freescale Semiconductor

MRF8P20140WHSR5 by Freescale is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in S BAND, has 2 elements, and a max temp of 125°C. Commonly used as an amplifier in surface mount applications due to its ceramic-metal package body material.
A2T26H300-24SR6 by NXP Semiconductors

A2T26H300-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD57006-01 by STMicroelectronics

PD57006-01

STMicroelectronics

PD57006-01 by STMicroelectronics is an N-channel RF power FET designed for switching applications. It features a 65V breakdown voltage, operates at up to 1A drain current, and supports ultra-high frequency bands. Ideal for compact, high-performance circuits in various electronic devices.
A3G20S350-01SR3 by NXP Semiconductors

A3G20S350-01SR3

NXP Semiconductors

NXP Semiconductors A3G20S350-01SR3 is an N-CHANNEL RF FET with 125V DS Breakdown Voltage, 17dB Power Gain, and GaN Element. Ideal for S Band applications, this DEPLETION MODE transistor operates from -55°C to 225°C in AMPLIFIER circuits.
BLF861A by NXP Semiconductors

BLF861A

NXP Semiconductors

The NXP Semiconductors BLF861A is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a COMMON SOURCE configuration, it has a max Drain Current of 18A and can handle up to 318W power dissipation at 200°C.
RF2L36040CF2 by STMicroelectronics

RF2L36040CF2

STMicroelectronics

RF Power Field-Effect Transistors;
BLM6G22-30G,118 by Ampleon Netherlands B V

BLM6G22-30G,118

Ampleon Netherlands B V

RF Power Field-Effect Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 245; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
ARF463AP1G by Advanced Power Technology

ARF463AP1G

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 500 V; Terminal Position: SINGLE; Transistor Application: AMPLIFIER;
934065696118 by NXP Semiconductors

934065696118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Package Style (Meter): FLATPACK; Case Connection: SOURCE;