STMicroelectronics - STB85NS04Z

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STB85NS04Z by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STB85NS04Z
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .015 ohm; No. of Terminals: 3; Package Shape: RECTANGULAR;
Datasheet STB85NS04Z Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 550 mJ
Other Names: 497-7954-6
497-7954-2
STB85NS04Z-ND
497-7954-1
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 60 A
Maximum Pulsed Drain Current (IDM): 320 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 33 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .015 ohm
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