STMicroelectronics - STL23NS3LLH7

  1. Home
  2. STMicroelectronics - STL23NS3LLH7
STL23NS3LLH7 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STL23NS3LLH7
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; Transistor Application: SWITCHING;
Datasheet STL23NS3LLH7 Datasheet
NAME DESCRIPTION
Other Names: -497-16040-2
-497-16040-1
497-16040-2
497-16040-1
-497-16040-6
497-16040-6
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 92 A
Maximum Pulsed Drain Current (IDM): 368 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .005 ohm
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IPT012N08N5ATMA1 by Infineon Technologies

IPT012N08N5ATMA1

Infineon Technologies

IPT012N08N5ATMA1 by Infineon Technologies is a N-CHANNEL FET with 80V DS Breakdown Voltage, 1200A IDM, and 0.0012 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. RECTANGULAR package style with PLASTIC/EPOXY body material and METAL-OXIDE SEMICONDUCTOR technology.
IRF7416TRPBF by International Rectifier

IRF7416TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
FDBL86062-F085 by Onsemi

FDBL86062-F085

Onsemi

FDBL86062-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 429W.
NDS355AN-NB9L007A by Fairchild Semiconductor

NDS355AN-NB9L007A

Fairchild Semiconductor

NDS355AN-NB9L007A by Fairchild Semiconductor is an N-CHANNEL power FET with a max drain current of 1.7A and a max power dissipation of 0.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
RFD14N05LSM9A by Fairchild Semiconductor

RFD14N05LSM9A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 14 A;
BSC900N20NS3GATMA1 by Infineon Technologies

BSC900N20NS3GATMA1

Infineon Technologies

BSC900N20NS3GATMA1 by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 200V and can handle a max pulsed drain current of 61A. This transistor is commonly used for switching applications.
IRF640STRLPBF by Vishay Siliconix

IRF640STRLPBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 18 A; Avalanche Energy Rating (EAS): 580 mJ; Terminal Position: SINGLE;
IRF3205PBF by International Rectifier

IRF3205PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Case Connection: DRAIN; No. of Elements: 1;
AUIRF7759L2TR1 by International Rectifier

AUIRF7759L2TR1

International Rectifier

AUIRF7759L2TR1 by International Rectifier is a N-CHANNEL Power FET with 375A ID and 125W power dissipation. Ideal for high-power applications, it operates at up to 175°C. Suitable for surface mount configurations, this METAL-OXIDE SEMICONDUCTOR transistor offers robust performance in demanding environments.
NTD5865NLT4G by Onsemi

NTD5865NLT4G

Onsemi

NTD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 52W and can withstand temperatures from -55 to 150 °C.
FDC5614P by Onsemi

FDC5614P

Onsemi

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
FDB3632 by Onsemi

FDB3632

Onsemi

Onsemi's FDB3632 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 12A Drain Current, and 0.009 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates b/w -55 to 175 °C with an EAS of 337 mJ.
IRFP460 by Fairchild Semiconductor

IRFP460

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Minimum DS Breakdown Voltage: 500 V; JEDEC-95 Code: TO-247;
CSD19534Q5AT by Texas Instruments

CSD19534Q5AT

Texas Instruments

CSD19534Q5AT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It is used for switching applications, has a max IDM of 137A and an EAS rating of 55mJ.
BSS123 by North American Philips Discrete Products Div

BSS123

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (ID): .17 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF640 by NXP Semiconductors

IRF640

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;
FQP27P06_SW82127 by Onsemi

FQP27P06_SW82127

Onsemi

FQP27P06_SW82127 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 108A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 120W, this transistor has a -55 to 175 °C operating temperature range.
IRFP460APBF by Vishay Intertechnology

IRFP460APBF

Vishay Intertechnology

Vishay Intertechnology's IRFP460APBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 280W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
BSC014N06NSATMA1 by Infineon Technologies

BSC014N06NSATMA1

Infineon Technologies

BSC014N06NSATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.00145 ohm RDS(on), and 400A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has an EAS of 580mJ.
NVMFD5C650NLWFT1G by Onsemi

NVMFD5C650NLWFT1G

Onsemi

NVMFD5C650NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 502A IDM, and 0.0058 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.