STMicroelectronics - STP52N25M5

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STP52N25M5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STP52N25M5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: ULTRA LOW-ON RESISTANCE; Terminal Position: SINGLE; Package Body Material: PLASTIC/EPOXY;
Datasheet STP52N25M5 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 230 mJ
Other Names: 497-11233-5
-497-11233-5
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 28 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 112 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 250 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: ULTRA LOW-ON RESISTANCE
Maximum Drain-Source On Resistance: .065 ohm
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