Image shown is a representation only.
| Manufacturer | Taiwan Semiconductor |
|---|---|
| Manufacturer's Part Number | P6SMB68AR5G |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | P6SMB68AR5G Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Config: | SINGLE |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Surface Mount: | YES |
| Terminal Finish: | PURE TIN |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Non Repetitive Peak Reverse Power Dissipation: | 600 W |
| Technology: | AVALANCHE |
| JESD-30 Code: | R-PDSO-C2 |
| Minimum Breakdown Voltage: | 64.6 V |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | C BEND |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
P6SMB68AR5G P6SMB68A R5G-ND |
| Maximum Breakdown Voltage: | 71.4 V |
| Maximum Repetitive Peak Reverse Voltage: | 58.1 V |
| JEDEC-95 Code: | DO-214AA |
| Minimum Operating Temperature: | -65 Cel |
| Diode Element Material: | SILICON |
| Maximum Power Dissipation: | 3 W |
| Additional Features: | EXCELLENT CLAMPING CAPABILITY |
| Reference Standard: | AEC-Q101 |
