SMB10J17AHR5G by Taiwan Semiconductor | Diodes

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Manufacturer	Taiwan Semiconductor
Manufacturer's Part Number	SMB10J17AHR5G
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	SMB10J17AHR5G Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	1000 W
Technology:	AVALANCHE
JESD-30 Code:	R-PDSO-C2
Minimum Breakdown Voltage:	18.9 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	C BEND
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	175 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	SMB10J17AHR5GCT SMB10J17AHR5GTR SMB10J17AHR5GDKR
Maximum Breakdown Voltage:	20.9 V
Maximum Repetitive Peak Reverse Voltage:	17 V
JEDEC-95 Code:	DO-214AA
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Diode Element Material:	SILICON
Maximum Power Dissipation:	5 W
Additional Features:	EXCELLENT CLAMPING CAPABILITY
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	250

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