Taiwan Semiconductor - TSM2323CXRFG

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TSM2323CXRFG by Taiwan Semiconductor

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Manufacturer Taiwan Semiconductor
Manufacturer's Part Number TSM2323CXRFG
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Additional Features: ULTRA LOW RESISTANCE; Peak Reflow Temperature (C): 260;
Datasheet TSM2323CXRFG Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.7 A
Maximum Pulsed Drain Current (IDM): 20 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .039 ohm
Other Names: TSM2323CXRFGTR-ND
TSM2323CXRFGCT-ND
1801-TSM2323CXRFGCT
TSM2323CX RFGTR
TSM2323CXRFGTR
TSM2323CX RFGCT-ND
TSM2323CX RFGDKR
TSM2323CX RFGDKR-ND
1801-TSM2323CXRFGDKR
TSM2323CX RFGTR-ND
1801-TSM2323CXRFGTR
TSM2323CXRFGDKR
TSM2323CX RFGCT
TSM2323CXRFGCT
TSM2323CXRFGDKR-ND
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Additional Features: ULTRA LOW RESISTANCE
Peak Reflow Temperature (C): 260
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