Texas Instruments - JAN2N4948

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JAN2N4948 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number JAN2N4948
Description Unijunction Transistors; Qualification: Not Qualified;
NAME DESCRIPTION
Qualification: Not Qualified
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2N491B by Texas Instruments

2N491B

Texas Instruments

2N491B by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. Ideal for low-power switching circuits in various electronic devices.
2N4948 by Onsemi

2N4948

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Peak Point Current: 2 mA; Maximum Static Inter-Base Resistance: 12 kohm; Transistor Element Material: SILICON;
2N494A by Onsemi

2N494A

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Peak Point Current: 12 mA; Maximum Emitter Current: 70 mA;
2N4870 by Crimson Semiconductor

2N4870

Crimson Semiconductor

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Inter-base Voltage: 35 V; Transistor Element Material: SILICON;
2N494B by Texas Instruments

2N494B

Texas Instruments

The Texas Instruments 2N494B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and power dissipation of 0.45W. It operates b/w -65°C to 140°C, with static inter-base resistance ranging from 6.2kohm to 9.1kohm. Ideal for applications requiring precise triggering and timing control in electronic circuits.
2N490A by Texas Instruments

2N490A

Texas Instruments

2N490A by Texas Instruments is a Unijunction Transistor (UFT) with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. It is used for switching applications due to its silicon element material and isolated case connection.
2N4851 by Texas Instruments

2N4851

Texas Instruments

2N4851 by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 50mA, operating temperature range from -65 to 200°C, and a package style in cylindrical shape. With a min intrinsic stand-off ratio of 0.56 and max static inter-base resistance of 9.1kohm, it is ideal for low-power electronic circuits.
2N2646 by Asi Semiconductor

2N2646

Asi Semiconductor

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JEDEC-95 Code: TO-18; No. of Elements: 1;
2N2418B by Onsemi

2N2418B

Onsemi

The Onsemi 2N2418B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for low current operations at temperatures ranging from -65 to 140 °C.
2N2646 by Semiconductors

2N2646

Semiconductors

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Intrinsic Stand-off Ratio: .75; Minimum Intrinsic Stand-off Ratio: .56; Maximum Static Inter-Base Resistance: 9.1 kohm;
2N2646 by New Jersey Semiconductor Products

2N2646

New Jersey Semiconductor Products

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Position: BOTTOM; Qualification: Not Qualified;
2N4870 by Space Power Electronics

2N4870

Space Power Electronics

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-PBCY-W3; Minimum Operating Temperature: -55 Cel;
2N4870 by Asi Semiconductor

2N4870

Asi Semiconductor

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Emitter Current: 50 mA; Terminal Form: WIRE;
2N493A by Texas Instruments

2N493A

Texas Instruments

2N493A by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 70mA, ideal for switching applications. It has a max inter-base voltage of 65V and can operate in temperatures ranging from -65 to 140°C. The transistor element material is silicon, and it features a package style of cylindrical with isolated case connection.
2N1671A by Texas Instruments

2N1671A

Texas Instruments

2N1671A by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 50mA and max power dissipation of 0.45W. It is commonly used for switching applications due to its single configuration and silicon transistor element material. Operating temperature ranges from -65°C to 140°C, making it suitable for various electronic devices.
2N4947 by Texas Instruments

2N4947

Texas Instruments

2N4947 by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 50mA, operating temperature range of -65 to 200°C, and max power dissipation of 0.36W. With a package style of cylindrical and terminal form as wire, it offers reliable performance in various electronic circuits.
P2646 by Onsemi

P2646

Onsemi

Onsemi's P2646 is a Unijunction Transistor with key specs: Min. Stand-off Ratio 0.56, Max. Inter-Base Resistance 9.1 kohm, Min. Valley Point Current 4 mA. Ideal for applications requiring precise triggering and control in electronic circuits.
2N4891 by Texas Instruments

2N4891

Texas Instruments

2N4891 by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 50mA and max power dissipation of 0.3W. Ideal for switching applications, it operates b/w -55 to 150 °C, with a min static inter-base resistance of 4kohm and max peak point current of 5mA.
2SH21 by Toshiba

2SH21

Toshiba

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .25 W; Maximum Intrinsic Stand-off Ratio: .85; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Static Inter-Base Resistance: 4 kohm;
2N2646 by Harris Semiconductor

2N2646

Harris Semiconductor

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Inter-base Voltage: 35 V; Maximum Static Inter-Base Resistance: 9.1 kohm; Minimum Static Inter-Base Resistance: 4.7 kohm;