Diodes Incorporated Crystal Oscillators 1,477

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

FP2400015

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

20 pF

TR

30 ohm

20 %

-20 Cel

24 MHz

10 uW

L7.0XB5.0XH1.15 (mm)/L0.276XB0.197XH0.045 (inch)

70 Cel

F60800010

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

8 MHz

10 uW

L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)

F61200046

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

12 MHz

10 uW

L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)

F62500047

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

10 uW

L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)

F80800016

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

8 pF

AT CUT; TR, 7 INCH

200 ohm

50 %

-20 Cel

8 MHz

10 uW

L8.0XB4.5XH1.4 (mm)/L0.315XB0.177XH0.055 (inch)

70 Cel

F90800021

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

18 pF

AT CUT; TR, 7 INCH

100 ohm

30 %

-40 Cel

8 MHz

10 uW

L5.0XB3.2XH1.2 (mm)/L0.197XB0.126XH0.047 (inch)

85 Cel

FH1840004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; TR, 7 INCH

80 ohm

30 %

-20 Cel

18.432 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

FH2400049

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

10 pF

AT CUT; TR, 7 INCH

50 ohm

30 %

-40 Cel

24 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

85 Cel

FH3200011

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

10 pF

AT CUT; TR, 7 INCH

60 ohm

10 %

0 Cel

32 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

FH4000047

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

2 PPM/YEAR

10 pF

AT CUT; TR, 7 INCH

60 ohm

10 %

-20 Cel

40 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

75 Cel

FH4800020Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT; TR, 7 INCH

50 ohm

10 %

-10 Cel

48 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

85 Cel

FL1200012

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

12 pF

AT-CUT; TR, 7 INCH

100 ohm

30 %

-20 Cel

GOLD OVER NICKEL

e4

12 MHz

100 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

70 Cel

FL1200135

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

18 pF

AT CUT; TR, 7 INCH

100 ohm

50 %

-20 Cel

GOLD OVER NICKEL

e4

12 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

70 Cel

FL1350008

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; TR, 7 INCH

100 ohm

20 %

-20 Cel

GOLD OVER NICKEL

e4

13.5 MHz

10 uW

L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)

70 Cel

FL1840006

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

15 pF

AT CUT; TR, 7 INCH

80 ohm

20 %

-20 Cel

GOLD OVER NICKEL

e4

18.432 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

70 Cel

FL1840007

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

18 pF

AT CUT; TR, 7 INCH

70 ohm

20 %

-20 Cel

GOLD OVER NICKEL

e4

18.432 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

70 Cel

FL2500281

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

18 pF

AT-CUT; TR, 7 INCH

50 ohm

50 %

-20 Cel

GOLD OVER NICKEL

e4

25 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

70 Cel

FL2600177Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

10 pF

AT-CUT; TR, 7 INCH

50 ohm

20 %

-20 Cel

GOLD OVER NICKEL

e4

26 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

70 Cel

FQ1200007

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

18 pF

AT CUT; TR, 7 INCH

120 ohm

30 %

-40 Cel

12 MHz

10 uW

L3.2XB2.5XH0.75 (mm)/L0.126XB0.098XH0.03 (inch)

85 Cel

FQ2400005

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

18 pF

AT CUT; TR, 7 INCH

60 ohm

30 %

-40 Cel

24 MHz

10 uW

L3.2XB2.5XH0.75 (mm)/L0.126XB0.098XH0.03 (inch)

85 Cel

FQ2500016

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

18 pF

AT CUT; TR, 7 INCH

30 ohm

20 %

-40 Cel

25 MHz

10 uW

L3.2XB2.5XH0.75 (mm)/L0.126XB0.098XH0.03 (inch)

85 Cel

FW1920001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT; TR, 7 INCH

150 ohm

10 %

-20 Cel

19.2 MHz

10 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

70 Cel

FW2500016Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

6 pF

AT CUT; TR, 7 INCH

150 ohm

40 %

-30 Cel

25 MHz

10 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

85 Cel

FW3200020

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT; TR, 7 INCH

50 ohm

30 %

-40 Cel

32 MHz

10 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

85 Cel

FW3740009

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

11 pF

AT-CUT; TR, 7 INCH

100 ohm

15 %

-20 Cel

37.4 MHz

10 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

70 Cel

FY1000009

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

20 pF

AT-CUT; TR, 7 INCH

60 ohm

30 %

-40 Cel

10 MHz

10 uW

L5.0XB3.2XH0.95 (mm)/L0.197XB0.126XH0.037 (inch)

85 Cel

FY1000020

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

10 pF

AT-CUT; TR, 7 INCH

80 ohm

10 %

-20 Cel

10 MHz

10 uW

L5.0XB3.2XH0.95 (mm)/L0.197XB0.126XH0.037 (inch)

70 Cel

FY2400053

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

8 pF

AT-CUT; TR, 7 INCH

50 ohm

10 %

-20 Cel

24 MHz

10 uW

L5.0XB3.2XH0.95 (mm)/L0.197XB0.126XH0.037 (inch)

70 Cel

FY2500115

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

5 PPM/FIRST YEAR

8 pF

AT-CUT; TR, 7 INCH

50 ohm

10 %

-20 Cel

25 MHz

100 uW

L5.0XB3.2XH0.95 (mm)/L0.197XB0.126XH0.037 (inch)

70 Cel

G23270023

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

X CUT; BAG

35000 ohm

49 %

-10 Cel

.032768 MHz

1 uW

D2.0XH6.0 (mm)/D0.079XH0.236 (inch)

60 Cel

G93270001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

9 pF

TR, 7 INCH

90000 ohm

108 %

-40 Cel

.032768 MHz

.1 uW

L2.0XB1.2XH0.6 (mm)/L0.079XB0.047XH0.024 (inch)

85 Cel

G93270002

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

TR, 7 INCH

90000 ohm

108 %

-40 Cel

.032768 MHz

.1 uW

L2.0XB1.2XH0.6 (mm)/L0.079XB0.047XH0.024 (inch)

85 Cel

G93270004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

TR, 7 INCH

90000 ohm

108 %

-40 Cel

.032768 MHz

.1 uW

L2.0XB1.2XH0.6 (mm)/L0.079XB0.047XH0.024 (inch)

85 Cel

GC0800044

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

8 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

GC0800053

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

8 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

GC2500081

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

GC2500162

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

30 ohm

30 %

-20 Cel

25 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

70 Cel

GC2500164

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

5 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

FH3000007

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR, 7 INCH

60 ohm

30 %

-20 Cel

30 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

FL260WFMT1

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

7 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT; TR, 7 INCH

30 ohm

17 %

-40 Cel

GOLD OVER NICKEL

e4

26 MHz

100 uW

L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)

100 Cel

FL384WFIN1

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

7 pF

AT CUT; TR, 7 INCH

60 ohm

12 %

-30 Cel

GOLD OVER NICKEL

e4

38.4 MHz

10 uW

L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)

90 Cel

G83270021

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

AT CUT; TR, 7 INCH

70000 ohm

108 %

-40 Cel

.032768 MHz

.1 uW

L3.2XB1.5XH0.8 (mm)/L0.126XB0.059XH0.031 (inch)

85 Cel

G83270025

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

9 pF

TR, 7 INCH

70000 ohm

108 %

-40 Cel

.032768 MHz

.1 uW

L3.2XB1.5XH0.8 (mm)/L0.126XB0.059XH0.031 (inch)

85 Cel

GB0400034

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

5 PPM/FIRST YEAR

30 pF

AT CUT; BAG

80 ohm

30 %

-25 Cel

4 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

70 Cel

GC0800002

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

18 pF

AT CUT; TR

100 ohm

30 %

-40 Cel

8 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

85 Cel

GC1200050

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

16 pF

AT CUT; TR

60 ohm

50 %

-10 Cel

12 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

60 Cel

GC2500100

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

5 PPM/FIRST YEAR

16 pF

AT CUT; TR

30 ohm

50 %

-10 Cel

25 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

60 Cel

FF1200030

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

12 MHz

10 uW

L4.0XB2.5XH0.65 (mm)/L0.157XB0.098XH0.026 (inch)

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance