Diodes Incorporated Crystal Oscillators 1,477

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Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Nominal Operating Frequency	Drive Level	Physical Dimension	Maximum Operating Temperature
FY4000022	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						40 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4000041	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						40 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4000078	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						40 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4000081	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						40 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4000087	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						40 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4000092	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						40 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4000097	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						40 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4510002	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						45.1 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4800015	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						48 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4800030	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						48 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4800034	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						48 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4800035	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						48 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4800038	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						48 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4800039A	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						48 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4800039	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						48 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4800043	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						48 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4800054	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						48 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY4800058	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						48 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
FY5400014	Diodes Incorporated	PARALLEL - 3RD OVERTONE	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						54 MHz	10 uW	L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)
F83120001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						31.2 MHz	10 uW	L8.0XB4.5XH1.4 (mm)/L0.315XB0.177XH0.055 (inch)
F83530002	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT; TR						35.3 MHz	10 uW	L8.0XB4.5XH1.4 (mm)/L0.315XB0.177XH0.055 (inch)
FH1920004	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	12 pF	AT-CUT; TR, 7 INCH	70 ohm	30 %	-20 Cel			19.2 MHz	100 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
FH2500074	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	10 pF	AT-CUT; TR, 7 INCH	50 ohm	10 %	-20 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	85 Cel
G83270023	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	3 PPM/FIRST YEAR	7 pF	TR, 7 INCH	70000 ohm	108 %	-40 Cel			.032768 MHz	.1 uW	L3.2XB1.5XH0.8 (mm)/L0.126XB0.059XH0.031 (inch)	85 Cel
FW374WFMR1	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	8 pF	AT-CUT; TR, 7 INCH	30 ohm	100000 %	-30 Cel			37.4 MHz	10 uW	L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)	85 Cel
F90800018Q	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	5 PPM/FIRST YEAR	8 pF	AT-CUT; TR, 7 INCH	120 ohm	50 %	-40 Cel			8 MHz	10 uW	L5.0XB3.2XH1.2 (mm)/L0.197XB0.126XH0.047 (inch)	125 Cel
FL374WFMR1	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	8 pF	AT-CUT; TR, 7 INCH	30 ohm	100000 %	-30 Cel	GOLD OVER NICKEL		37.4 MHz	10 uW	L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)	85 Cel
G83270022	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	12.5 pF	TR,7 INCH	70000 ohm	108 %	-40 Cel			.032768 MHz	.1 uW	L3.2XB1.5XH0.8 (mm)/L0.126XB0.059XH0.031 (inch)	85 Cel
F62700016	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	18 pF	AT-CUT; TR, 7 INCH	50 ohm	50 %	-40 Cel			27 MHz	10 uW	L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)	85 Cel
FW260WFMR1	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	3 PPM/FIRST YEAR	9 pF	AT-CUT; TR, 7 INCH	60 ohm	10 %	-20 Cel			26 MHz	10 uW	L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)	85 Cel
F62400017	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	18 pF	AT CUT; TR, 7 INCH	50 ohm	30 %	-40 Cel			24 MHz	10 uW	6X3.5X1.2 m	85 Cel
FL5000066	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT		3 PPM/FIRST YEAR		AT-CUT	40 ohm			GOLD OVER NICKEL	e4	50 MHz	10 uW	3.2mm X 2.5mm X 0.68mm
FL0800024	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	10 pF	AT CUT	500 ohm	50 %	-40 Cel			8 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	85 Cel
GC1350032	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	10 ppm	5 PPM/FIRST YEAR	18 pF	AT CUT	40 ohm	20 %	-40 Cel			13.5 MHz	100 uW	11.7mm x 4.8mm x 4mm	85 Cel
FL2400096	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT	50 ohm	30 %	-40 Cel			24 MHz	10 uW	3.2mm x 2.5mm x 0.65mm	85 Cel
FL3880004	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	10 PPM/10 YEAR	12 pF	AT CUT	40 ohm	20 %	-40 Cel			38.88 MHz	140 uW	3.2mm X 2.5mm X 0.65mm	85 Cel
GC2500168	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	20 ppm	3 PPM/FIRST YEAR	10 pF	AT CUT	50 ohm	20 %	-40 Cel			25 MHz	300 uW	11.7mm x 4.8mm x 4mm	85 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance