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Part	Manufacturer	Logic IC Type	Temperature Grade	Terminal Form	No. of Terminals	Package Code	Package Shape	Package Body Material	Schmitt Trigger	Surface Mount	No. of Functions	Technology	Screening Level	No. of Inputs	No. of Bits	Packing Method	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Load Capacitance (CL)	Package Style (Meter)	Package Equivalence Code	Propagation Delay (tpd)	Maximum I (ol)	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Minimum Operating Temperature	Terminal Finish	Terminal Position	Control Type	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Output Polarity	Minimum Supply Voltage (Vsup)	Maximum Power Supply Current (ICC)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Family
TC7SET17F(TE85L,F)	Toshiba	BUFFER	INDUSTRIAL	GULL WING	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	YES	1	CMOS		1		TR	5	5	50 pF	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	12.4 ns	8 Amp	Gates	.95 mm	85 Cel		-40 Cel		DUAL		R-PDSO-G5		5.5 V			Not Qualified		4.5 V
TC7PH34FE(TE85L,F)	Toshiba	BUFFER	INDUSTRIAL	FLAT	6	DFP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	2	CMOS		1		TR	5	2/5.5	50 pF	FLATPACK	FL6,.047,20	12 ns	4 Amp	Gates	.5 mm	85 Cel		-40 Cel		DUAL		R-PDFP-F6		5.5 V			Not Qualified		2 V
TC7SH34FS(TPL3)	Toshiba	BUFFER	INDUSTRIAL	FLAT	6	DFP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	1	CMOS		1		TR	3.3	2/5.5	50 pF	FLATPACK	FL6,.03,14	12 ns	4 Amp	Gates	.35 mm	85 Cel		-40 Cel		DUAL		R-PDFP-F6		5.5 V			Not Qualified		2 V
74LV1GW17ACME-E	Renesas Electronics	BUFFER	INDUSTRIAL	GULL WING	6	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	YES	2	CMOS		1		TR	3.3	3.3	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP6,.08	46 ns	6 Amp	Gates	.635 mm	85 Cel		-40 Cel		DUAL		R-PDSO-G6		5.5 V			Not Qualified		1.65 V
74LV1GW07ACME-E	Renesas Electronics	BUFFER	INDUSTRIAL	GULL WING	6	TSSOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	2	CMOS		1		TR	5	3.3	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP6,.08	36 ns	6 Amp	Gates	.635 mm	85 Cel	OPEN-DRAIN	-40 Cel		DUAL		R-PDSO-G6		5.5 V			Not Qualified		1.65 V
ALVC1G07VSE-E	Renesas Electronics	BUFFER	INDUSTRIAL	FLAT	5	DFP	RECTANGULAR	PLASTIC/EPOXY	NO	YES		CMOS				TR	3.3	3.3		FLATPACK	FL5/6,.047,20		24 Amp	Gates	.5 mm	85 Cel	OPEN-DRAIN	-40 Cel		DUAL		R-PDFP-F5					Not Qualified
TC74HC4050AP(F)	Toshiba	BUFFER	INDUSTRIAL	THROUGH-HOLE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	NO	6	CMOS		1			4.5	2/6	150 pF	IN-LINE	DIP16,.3	145 ns	7.8 Amp	Gates	2.54 mm	85 Cel		-40 Cel		DUAL		R-PDIP-T16		6 V	4.45 mm	7.62 mm	Not Qualified		2 V	75 mA					19.25 mm	HC
TC74HC4050AF(EL,F)	Toshiba	BUFFER	INDUSTRIAL	GULL WING	16	SOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	6	CMOS		1			4.5	2/6	150 pF	SMALL OUTLINE	SOP16,.3	145 ns	7.8 Amp	Gates	1.27 mm	85 Cel		-40 Cel		DUAL		R-PDSO-G16	1	6 V	1.9 mm	5.3 mm	Not Qualified		2 V	75 mA			40	260	10.3 mm	HC
74LVC2G34FW4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	NO	YES	2	CMOS		1		TR	1.8	3.3	50 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	10.8 ns	24 Amp	Gate	.35 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		S-PDSO-N6	1	5.5 V	.4 mm	1 mm	Not Qualified		1.65 V			e4	30	260	1 mm	LVC/LCX/Z
CLVC2G17MDCKREPG4	Texas Instruments	BUFFER	MILITARY	GULL WING	6	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	YES	2	CMOS		1		TR	3.3	3.3	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP6,.08	13 ns	32 Amp	Gates	.65 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G6	1	5.5 V	1.1 mm	1.25 mm	Not Qualified		1.65 V	.01 mA		e4	30	260	2 mm	LVC/LCX/Z
74LVC1G07FW4-7	Diodes Incorporated	BUFFER	INDUSTRIAL	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	NO	YES	1	CMOS		1		TR	1.8	3.3		SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	6.5 ns	24 Amp	Gates	.35 mm	85 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		S-PDSO-N6	1	5.5 V	.4 mm	1 mm	Not Qualified		1.65 V			e4	30	260	1 mm	LVC/LCX/Z
NLU3G16EMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	8	VSON	RECTANGULAR	PLASTIC/EPOXY	NO	YES	3	CMOS		1		TR	2	3.3	50 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.04,16	14.5 ns	4 Amp	Gates	.4 mm	125 Cel		-55 Cel		DUAL		R-PDSO-N8	1	5.5 V	.55 mm	1 mm	Not Qualified		1.65 V						1.6 mm	3G
NLU3G16FMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	8	VSON	RECTANGULAR	PLASTIC/EPOXY	NO	YES	3	CMOS		1		TR	2	3.3	50 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.04,14	14.5 ns	4 Amp	Gates	.35 mm	125 Cel		-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-N8	1	5.5 V	.55 mm	1 mm	Not Qualified		1.65 V			e4			1.45 mm	3G
NLX3G16EMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	8	VSON	RECTANGULAR	PLASTIC/EPOXY	NO	YES	3	CMOS		1		TR	1.8	1.8/5	15 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,16	12 ns	4 Amp	Gates	.4 mm	125 Cel		-55 Cel		DUAL		R-PDSO-N8		5.5 V	.55 mm	1 mm	Not Qualified		1.65 V						1.6 mm	3G
NLX3G16FMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	8	VSON	RECTANGULAR	PLASTIC/EPOXY	NO	YES	3	CMOS		1		TR	1.8	1.8/5	15 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	12 ns	4 Amp	Gates	.35 mm	125 Cel		-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-N8	1	5.5 V	.55 mm	1 mm	Not Qualified		1.65 V			e4			1.45 mm	3G
SN74LVC1G07DCKJ	Texas Instruments	BUFFER	INDUSTRIAL	GULL WING	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	1	CMOS		1			1.8	3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08	8.3 ns	24 Amp	Gates	.65 mm	85 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G5	1	5.5 V	1.1 mm	1.25 mm	Not Qualified		1.65 V			e4	30	260	2 mm	LVC/LCX/Z
SN74LVC1G17DCKJ	Texas Instruments	BUFFER	INDUSTRIAL	GULL WING	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	YES	1	CMOS		1		TR	3.3	3.3	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08	11 ns	24 Amp	Gates	.65 mm	85 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G5	1	5.5 V	1.1 mm	1.25 mm	Not Qualified		1.65 V			e4	30	260	2 mm	LVC/LCX/Z
NLV37WZ07USG	Onsemi	BUFFER	MILITARY	GULL WING	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	3	CMOS	AEC-Q100	1		TR	1.8	3.3	50 pF	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20	7.8 ns	24 Amp	Gates	.5 mm	125 Cel	OPEN-DRAIN	-55 Cel	MATTE TIN	DUAL		R-PDSO-G8	1	5.5 V	.9 mm	2 mm	Not Qualified		1.65 V			e3	30	260	2.3 mm	LVC/LCX/Z
NLX2G07AMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY	NO	YES	2	CMOS		1		TR	2.3	1.8/5	15 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,20	12 ns	8 Amp	Gates	.5 mm	125 Cel	OPEN-DRAIN	-55 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N6	1	5.5 V	.4 mm	1 mm	Not Qualified		1.65 V			e4	30	260	1.45 mm	2G
NLX2G07CMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	NO	YES	2	CMOS		1		TR	2.3	1.8/5	15 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	12 ns	8 Amp	Gates	.35 mm	125 Cel	OPEN-DRAIN	-55 Cel	Nickel/Gold/Palladium (Ni/Au/Pd)	DUAL		S-PDSO-N6	1	5.5 V	.55 mm	1 mm	Not Qualified		1.65 V						1 mm	2G
NLX2G16AMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY	NO	YES	2	CMOS		1		TR	2.3	1.8/5	15 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,20	10.2 ns	4 Amp	Gates	.5 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N6	1	5.5 V	.55 mm	1 mm	Not Qualified		1.65 V			e4	30	260	1.45 mm	2G
NLX2G16CMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	NO	YES	2	CMOS		1		TR	2.3	1.8/5	15 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	10.2 ns	4 Amp	Gates	.35 mm	125 Cel		-55 Cel	NICKEL GOLD PALLADIUM	DUAL		S-PDSO-N6	1	5.5 V	.55 mm	1 mm	Not Qualified		1.65 V						1 mm	2G
NLX2G17AMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	YES	2	CMOS		1		TR	1.8	1.8/5	15 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,20	15.6 ns	4 Amp	Gates	.5 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N6	1	5.5 V	.55 mm	1 mm	Not Qualified		1.65 V			e4			1.45 mm	2G
NL17SG34P5T5G	Onsemi	BUFFER	MILITARY	FLAT	5	VSOF	RECTANGULAR	PLASTIC/EPOXY	NO	YES	1	CMOS		1		TR	1.1	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	FL5/6,.03,14	22.4 ns	8 Amp	Gates	.35 mm	125 Cel		-55 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-F5	1	4.6 V	.4 mm	.8 mm	Not Qualified		.9 V	20 mA		e3	NOT SPECIFIED	NOT SPECIFIED	1 mm	LVP
NLU1GT126AMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		1	1	TR	5	1.8/5	50 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,20	16 ns	4 Amp	Bus Driver/Transceivers	.5 mm	125 Cel	3-STATE	-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	ENABLE HIGH	R-PDSO-N6	1	5.5 V	.55 mm	1 mm	Not Qualified	TRUE	1.65 V			e4	30	260	1.45 mm	1G
NLU2G17AMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	YES	2	CMOS		1		TR	5	1.8/5	50 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,20	20.5 ns	4 Amp	Gates	.5 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N6	1	5.5 V	.55 mm	1 mm	Not Qualified		1.65 V			e4	30	260	1.45 mm	2G
NLU2G17CMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	YES	YES	2	CMOS		1		TR	5	1.8/5	50 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	20.5 ns	4 Amp	Gates	.35 mm	125 Cel		-55 Cel	NICKEL GOLD PALLADIUM	DUAL		S-PDSO-N6	1	5.5 V	.55 mm	1 mm	Not Qualified		1.65 V				30	260	1 mm	2G
NLU2G16CMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	NO	YES	2	CMOS		1		TR	5	1.8/5	50 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	14.5 ns	4 Amp	Gates	.35 mm	125 Cel		-55 Cel	NICKEL GOLD PALLADIUM	DUAL		S-PDSO-N6	1	5.5 V	.55 mm	1 mm	Not Qualified		1.65 V				30	260	1 mm	2G
74AUP1G17FW4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY		YES	1	CMOS		1			3			SMALL OUTLINE, VERY THIN PROFILE		20.1 ns			.35 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		S-PDSO-N6	1	3.6 V	.4 mm	1 mm			.8 V			e4	30	260	1 mm	AUP/ULP/V
74AUP1G34FW4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY		YES	1	CMOS		1			3			SMALL OUTLINE, VERY THIN PROFILE		20.8 ns			.35 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		S-PDSO-N6	1	3.6 V	.4 mm	1 mm			.8 V			e4	30	260	1 mm	AUP/ULP/V
74AUP1G34FZ4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		1			3			SMALL OUTLINE, VERY THIN PROFILE		20.8 ns			.5 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N6	1	3.6 V	.4 mm	1 mm			.8 V			e4	30	260	1.4 mm	AUP/ULP/V
NLVVHC1GT50DFT2G	Onsemi	BUFFER	MILITARY	GULL WING	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	1	CMOS	AEC-Q100	1		TR	5	3.3/5	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08	25.5 ns	8 Amp	Gates	.65 mm	125 Cel		-55 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G5	1	5.5 V	1.1 mm	1.25 mm	Not Qualified		1.65 V	.04 mA		e3	NOT SPECIFIED	NOT SPECIFIED	2 mm	AHC/VHC/H/U/V
NLV14050BDG	Onsemi	BUFFER	MILITARY	GULL WING	16	SOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	6	CMOS	AEC-Q100	1		RAIL	5	5/15	50 pF	SMALL OUTLINE	SOP16,.25	140 ns		Gates	1.27 mm	125 Cel		-55 Cel	MATTE TIN	DUAL		R-PDSO-G16	1	18 V	1.75 mm	3.9 mm	Not Qualified		3 V			e3	30	260	9.9 mm	4000/14000/40000
NLV14050BDTG	Onsemi	BUFFER	MILITARY	GULL WING	16	TSSOP	RECTANGULAR	PLASTIC/EPOXY	NO	YES	6	CMOS	AEC-Q100	1		RAIL	5	5/15	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SOP16,.25	140 ns		Gates	.65 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	18 V	1.2 mm	4.4 mm	Not Qualified		3 V			e4	30	260	5 mm	4000/14000/40000
NLV37WZ17USG	Onsemi	BUFFER	INDUSTRIAL	GULL WING	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	YES	3	CMOS	AEC-Q100	1		TR	1.85	3.3	50 pF	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20	9.2 ns	32 Amp	Gates	.5 mm	125 Cel		-55 Cel	MATTE TIN	DUAL		R-PDSO-G8	1	5.5 V	.9 mm	2 mm	Not Qualified		1.65 V	100 mA		e3	30	260	2.3 mm	37WZ
74AUP2G34FW4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY	NO	YES	2	CMOS		1		TR	3	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	20.8 ns	1.7 Amp	Gates	.35 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		S-PDSO-N6	1	3.6 V	.4 mm	1 mm	Not Qualified		.8 V			e4	30	260	1 mm	AUP/ULP/V
74AUP1G07FW5-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY		YES	1	CMOS		1			1.2			SMALL OUTLINE, VERY THIN PROFILE		20.7 ns			.35 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		S-PDSO-N6		3.6 V	.5 mm	1 mm			.8 V			e4		260	1 mm	AUP/ULP/V
74AUP1G17FX4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	BALL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	YES	1	CMOS		1		TR	3	1.2/3.3	30 pF	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,20	20.1 ns	1.7 Amp	Gates	.5 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	BOTTOM		R-PBGA-B6	1	3.6 V	.4 mm	.9 mm	Not Qualified		.8 V			e4	30	260	1.4 mm	AUP/ULP/V
SN74LVC1G17DPKR	Texas Instruments	BUFFER	INDUSTRIAL	NO LEAD	5	SON	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		1			3.3			SMALL OUTLINE		11 ns				85 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N5	1	5.5 V					1.65 V			e4	30	260		LVC/LCX/Z
NL17SG17AMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		1			3			SMALL OUTLINE, VERY THIN PROFILE		58.1 ns			.5 mm	125 Cel		-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-N6	1	3.6 V	.55 mm	1 mm			.9 V			e4	30	260	1.45 mm	17SG
NL17SG17DFT2G	Onsemi	BUFFER	MILITARY	GULL WING	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		1			3			SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		58.1 ns			.65 mm	125 Cel		-55 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G5	1	3.6 V	1.1 mm	1.25 mm			.9 V			e3	30	260	2 mm	17SG
74AUP2G07FW3-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	SON	RECTANGULAR	PLASTIC/EPOXY		YES	2	CMOS		1			3			SMALL OUTLINE		25.8 ns			.3 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N6	1	3.6 V	.35 mm	.9 mm			.8 V			e4	30	260	1 mm	AUP/ULP/V
74AUP2G07FZ4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	RECTANGULAR	PLASTIC/EPOXY		YES	2	CMOS		1			3			SMALL OUTLINE, VERY THIN PROFILE		25.8 ns			.5 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N6	1	3.6 V	.4 mm	1 mm			.8 V			e4	30	260	1.4 mm	AUP/ULP/V
74AUP2G17FW4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE	PLASTIC/EPOXY		YES	2	CMOS		1			3			SMALL OUTLINE, VERY THIN PROFILE		20 ns			.35 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		S-PDSO-N6	1	3.6 V	.4 mm	1 mm			.8 V			e4	30	260	1 mm	AUP/ULP/V
HCF4010BEY	STMicroelectronics	BUFFER	MILITARY	THROUGH-HOLE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	NO	6	CMOS		1		TUBE	5	5/15	50 pF	IN-LINE	DIP16,.3	200 ns		Gates	2.54 mm	125 Cel	OPEN-DRAIN	-55 Cel	MATTE TIN	DUAL		R-PDIP-T16		20 V	5.1 mm	7.62 mm	Not Qualified		3 V		HIGH TO LOW LEVEL TRANSLATOR	e3				4000/14000/40000
HCF4050BEY	STMicroelectronics	BUFFER	MILITARY	THROUGH-HOLE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	NO	6	CMOS		1		TUBE	5	5/15	50 pF	IN-LINE	DIP16,.3	140 ns		Gates	2.54 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDIP-T16		20 V	5.1 mm	7.62 mm	Not Qualified		3 V		HIGH TO LOW LEVEL TRANSLATOR	e4				4000/14000/40000
M74HC4050B1R	STMicroelectronics	BUFFER	MILITARY	THROUGH-HOLE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	NO	6	CMOS		1		TUBE	4.5	2/6	150 pF	IN-LINE	DIP16,.3	150 ns	4 Amp	Gates	2.54 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDIP-T16		6 V	5.1 mm	7.62 mm	Not Qualified		2 V		CMOS-TTL LEVEL TRANSLATOR	e4				HC/UH
SN54AS1034AJ	Texas Instruments	BUFFER	MILITARY	THROUGH-HOLE	14	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	NO	6	TTL		1		TUBE	5	5	50 pF	IN-LINE	DIP14,.3	6.5 ns	48 Amp	Gates	2.54 mm	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-GDIP-T14		5.5 V	5.08 mm	7.62 mm	Not Qualified		4.5 V	35 mA	IOH = 40MA @ VOH = 2V; IOL = 40MA @ VOL = 0.5V	e0	NOT SPECIFIED	NOT SPECIFIED	19.56 mm	AS

Logic Gates

Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.

Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.

Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.

Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.

Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.

Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.