DDR DRAM MODULE DRAM 285

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT9KSF51272HZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		512MX72	512M		ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					67.6 mm
MTA18ADF1G72PZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G		DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF1G72HZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G		ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MTA18ASF1G72PDZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA36ASF2G72LZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT8KTF25664HZ-1G6M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	268435456 words	YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	Gold (Au)	ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm	800 MHz	3.8 mm	Not Qualified	17179869184 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX	e4			.096 Amp	67.6 mm
MT36HTF51272PZ-80EH1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6150 mA	536870912 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	512MX72	512M	Gold (Au)	DUAL	1	R-XDMA-N240	1.9 V	4 mm	400 MHz	30.175 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4			.252 Amp	133.35 mm	.45 ns
MT36HVS51272PZ-80EH1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6246 mA	536870912 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	512MX72	512M	GOLD	DUAL	1	R-XDMA-N240	1.9 V	4 mm	400 MHz	17.9 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4			.252 Amp	133.35 mm
MT16JSF51264HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3016 mA	536870912 words	YES	COMMON	1.5	1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M		DUAL	1	R-XDMA-N204	1.575 V	3.8 mm	667 MHz	30 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH				.192 Amp	67.6 mm
MT8HTF6464HDY-667D3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	GOLD	DUAL	1	R-XDMA-N200	1.9 V	3.8 mm	333 MHz	30.5 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4			.056 Amp	67.6 mm	.45 ns
MT4HTF3264AY-53ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1360 mA	33554432 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	32MX64	32M		DUAL		R-PDMA-N240			267 MHz		Not Qualified	2147483648 bit								.5 ns
MT8HTF6464HDY-53ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1380 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M		DUAL		R-PDMA-N200			266 MHz		Not Qualified	4294967296 bit						.056 Amp		.5 ns
MT16HTF6464AY-40EB2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1880 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	64MX64	64M		DUAL		R-PDMA-N240			200 MHz		Not Qualified	4294967296 bit						.08 Amp		.6 ns
MT4HTF3264HY-53ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1360 mA	33554432 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M		DUAL		R-PDMA-N200			267 MHz		Not Qualified	2147483648 bit						.028 Amp		.5 ns
MT16HTF12864AY-53ED4	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1856 mA	134217728 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M		DUAL		R-PDMA-N240			266 MHz		Not Qualified	8589934592 bit						.112 Amp		.5 ns
MT16VDDF12864HG-335D2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3280 mA	134217728 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	TIN LEAD	DUAL	1	R-XDMA-N200	2.7 V		167 MHz		Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH	e0			.08 Amp		.7 ns
MT18HTF12872AY-667D4	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3240 mA	134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX72	128M	GOLD	DUAL	1	R-XDMA-N240	1.9 V		333 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4
MT36HTF25672PY-667D1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	GOLD	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					45 ns
MT9HTF12872PKZ-80EH1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1890 mA	134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	Gold (Au)	DUAL	1	R-XDMA-N244	1.9 V	3.8 mm	400 MHz	30 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4				82 mm	.4 ns
MT9HTF12872PZ-80EH1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1890 mA	134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M	Gold (Au)	DUAL	1	R-XDMA-N240	1.9 V	30.5 mm	400 MHz	30.175 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4			.063 Amp	133.35 mm	.4 ns
MT16HTS51264HY-667A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2824 mA	536870912 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	GOLD	ZIG-ZAG	1	R-XZMA-N200	1.9 V	3.8 mm	333 MHz	30 mm	Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH	e4			.128 Amp	67.6 mm	.45 ns
MT16VDDF12864HY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4640 mA	134217728 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	GOLD	ZIG-ZAG	1	R-XZMA-N200	2.7 V		167 MHz		Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH	e4			.08 Amp		.7 ns
MT8VDDT6464HDG-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1940 mA	67108864 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M		DUAL		R-PDMA-N200			200 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT18VDDF12872Y-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		128MX72	128M	Gold (Au)	DUAL	1	R-XDMA-N184	2.7 V	28.73 mm		3.99 mm	Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4	30	260		133.35 mm
MT18VDDT12872AY-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		128MX72	128M	Gold (Au)	DUAL	1	R-XDMA-N184	2.7 V	31.9 mm		4 mm	Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4	30	260		133.35 mm
MT8VDDT6464HDG-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1640 mA	67108864 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M		DUAL		R-PDMA-N200			167 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT16VDDT12864AY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4640 mA	134217728 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M		DUAL		R-PDMA-N184			167 MHz		Not Qualified	8589934592 bit						.08 Amp		.7 ns
MT8VDDT3264HY-335G3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3280 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M		DUAL		R-PDMA-N200			167 MHz		Not Qualified	2147483648 bit								.7 ns
MT36VDDF12872G-335G3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		10440 mA	134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL		R-PDMA-N184			166 MHz		Not Qualified	9663676416 bit								.7 ns
MT4VDDT3264HG-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M		DUAL		R-PDMA-N200			167 MHz		Not Qualified	2147483648 bit								.7 ns
MT9VDDT6472AY-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3645 mA	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M	GOLD	DUAL	1	R-XDMA-N184	2.7 V	3.18 mm	167 MHz	31.75 mm	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4			.045 Amp	133.35 mm	.7 ns
MT16VDDF6464HY-335G2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4080 mA	67108864 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M		DUAL		R-PDMA-N200			167 MHz		Not Qualified	4294967296 bit						.064 Amp		.7 ns
MT8VDDT3264AY-40BG6	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3760 mA	33554432 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL		R-PDMA-N184			200 MHz		Not Qualified	2147483648 bit						.032 Amp		.7 ns
MT16VDDF6464HG-335G2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4080 mA	67108864 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M		DUAL		R-PDMA-N200			167 MHz		Not Qualified	4294967296 bit						.064 Amp		.7 ns
MT8VDDT3264AG-40BG6	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3760 mA	33554432 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL		R-PDMA-N184			200 MHz		Not Qualified	2147483648 bit						.032 Amp		.7 ns
MT9VDDT6472HY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3645 mA	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M	GOLD	ZIG-ZAG	1	R-XZMA-N200	2.7 V	3.8 mm	166 MHz	31.75 mm	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4			.045 Amp	67.6 mm	.7 ns
MT8VDDT3264AY-335G6	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3280 mA	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	GOLD	DUAL	1	R-XDMA-N184	2.7 V		167 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e4			.032 Amp		.7 ns
MT18HTF12872PY-667D2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M		DUAL	1	R-XDMA-N240	1.9 V	30.15 mm			Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		30	260		133.35 mm
MT18VDDF12872HY-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	Gold (Au)	DUAL	1	R-XDMA-N200	2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4	30	260
MT8HTF6464HDY-53EB3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1680 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	64MX64	64M		DUAL		R-PDMA-N200			267 MHz		Not Qualified	4294967296 bit						.04 Amp		.5 ns
MT16HTF12864HY-667B3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3360 mA	134217728 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	128MX64	128M		DUAL		R-PDMA-N200			333 MHz		Not Qualified	8589934592 bit						.08 Amp		.45 ns
MT8HTF6464HDY-667B3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	64MX64	64M		DUAL		R-PDMA-N200			333 MHz		Not Qualified	4294967296 bit						.04 Amp		.45 ns
MT18VDVF12872DY-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5220 mA	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	GOLD	DUAL	1	R-XDMA-N184	2.7 V		166 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4					.7 ns
MT18HTF25672AZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1728 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX72	256M		DUAL	1	R-XDMA-N240	1.9 V	30.5 mm	333 MHz	30 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH				.126 Amp	133.35 mm	.45 ns
MT18HTF25672PZ-667H1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	3330 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX72	256M	GOLD	DUAL	1	R-XDMA-N240	1.9 V	30.5 mm	333 MHz	30.175 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4			.126 Amp	133.35 mm	.45 ns
MT18VDVF12872Y-40BD4	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.6		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	GOLD	DUAL	1	R-XDMA-N184	2.7 V	4 mm		18.29 mm	Not Qualified	9663676416 bit	2.5 V	AUTO/SELF REFRESH	e4				133.35 mm
MT16JTF25664AY-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4640 mA	268435456 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M		DUAL		R-PDMA-N240			667 MHz		Not Qualified	17179869184 bit						.16 Amp
MT8JSF12864HY-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3920 mA	134217728 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M		DUAL		R-PDMA-N204			667 MHz		Not Qualified	8589934592 bit						.08 Amp

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.