DDR DRAM MODULE DRAM 285

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT16JSF25664HY-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4	30	260
MT4HTF6464AY-667E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N240				333 MHz		Not Qualified	4294967296 bit						.028 Amp		.45 ns
MT16HTF25664AY-667E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		30.175 mm	Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT8HTF12864HDY-667E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2160 mA	134217728 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	8589934592 bit						.056 Amp		.45 ns
MT4HTF6464HY-667E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	4294967296 bit						.028 Amp		.45 ns
MT18HTF6472Y-40EB2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4140 mA	67108864 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N240				200 MHz		Not Qualified	4831838208 bit						.09 Amp		.6 ns
MT16HTF25664AZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		4 mm		17179869184 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT18HTF25672AZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		4 mm		19327352832 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT18HTS25672RHZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm		19327352832 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX					67.6 mm
MT36HTF51272PZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		4 mm		38654705664 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT8HTF12864AZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		2.7 mm		8589934592 bit	1.7 V	SELF REFRESH; WD-MAX					133.35 mm
MT8HTF12864HDZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200		1.9 V	30.15 mm		3.8 mm		8589934592 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX					67.6 mm
MT9HTF12872AZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		2.7 mm		9663676416 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT9HTF12872PZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		2.7 mm		9663676416 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX		30	260		133.35 mm
MT9HTF12872RHZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm		9663676416 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX					67.6 mm
MT18HVF25672PDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT8HTF12864HTZ-667H1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	8589934592 bit	1.7 V	SELF CONTAINED REFRESH	e4				67.6 mm
MT9VDDT6472HIY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V	3.8 mm		31.75 mm	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4				67.6 mm
MT18HTF25672PDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1728 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm	333 MHz	4 mm	Not Qualified	19327352832 bit	1.7 V	SELF CONTAINED REFRESH; WD-MAX	e4			.126 Amp	133.35 mm	.45 ns
MT4HTF6464HZ-667H1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1400 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	333 MHz	2.45 mm	Not Qualified	4294967296 bit	1.7 V	WD-MAX	e3			.028 Amp	67.6 mm
MT4JSF12864HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1700 mA	134217728 words		COMMON	1.35	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm	667 MHz	2.45 mm	Not Qualified	8589934592 bit	1.283 V	WD-MAX		NOT SPECIFIED	NOT SPECIFIED	.048 Amp	67.6 mm	.255 ns
MT4JTF12864AZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1780 mA	134217728 words		COMMON	1.5	1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm	667 MHz	2.7 mm	Not Qualified	8589934592 bit	1.425 V	WD-MAX	e4			.048 Amp	133.35 mm
MT16HTF12864AY-667D4	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1976 mA	134217728 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N240				333 MHz		Not Qualified	8589934592 bit						.112 Amp		.45 ns
MT4HTF3264HY-667D3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	33554432 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	2147483648 bit						.028 Amp		.45 ns
MT4VDDT1664HY-335F3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	16777216 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	1073741824 bit								.7 ns
MT8VDDT6464HDY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1640 mA	67108864 words	YES	COMMON	2.5	2.5	8	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.61 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V	31.9 mm	167 MHz	3.8 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4			.04 Amp	67.6 mm	.7 ns
MT8VDDT6464HY-335F3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3240 mA	67108864 words	YES	COMMON	2.5	2.5	8	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.6 V	31.9 mm	167 MHz	3.8 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4			.04 Amp	67.6 mm	.7 ns
MT9VDDF6472Y-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3645 mA	67108864 words	YES	COMMON	2.5	2.5	8	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V	28.73 mm	167 MHz	3.175 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4			.045 Amp	133.35 mm	.7 ns
MT4VDDT3264HY-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	33554432 words	YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V	31.9 mm	200 MHz	2.45 mm	Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH; WD-MAX	e4				67.6 mm	.7 ns
MT9VDDT6472AY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4050 mA	67108864 words	YES	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V	31.75 mm	200 MHz	3.18 mm	Not Qualified	4831838208 bit	2.5 V	AUTO/SELF REFRESH	e4			.045 Amp	133.35 mm	.7 ns
MT36HTF51272PZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5160 mA	536870912 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	512MX72	512M	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm	333 MHz	30.175 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4			.252 Amp	133.35 mm	.4 ns
MT18HVF25672PZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3330 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N240		1.9 V	18.05 mm	333 MHz	17.9 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4			.126 Amp	133.35 mm	.45 ns
MT18KSF1G72PDZ-1G6N1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					133.35 mm
MT72JSZS2G72PZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6732 mA	2147483648 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm	533 MHz	30 mm	Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH					133.35 mm
MT9JSF25672AZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2880 mA	268435456 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V		533 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH				.108 Amp		.3 ns
MT36KDZS1G72PZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	7236 mA	1073741824 words	YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	1GX72	1G	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N240		1.45 V		667 MHz		Not Qualified	77309411328 bit	1.283 V	AUTO/SELF REFRESH	e4			.432 Amp
MT4HTF6464AZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	920 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N240	1	1.9 V	30.5 mm	333 MHz	30.175 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e3			.028 Amp	133.35 mm	.45 ns
MTA9ADF1G72PKIZ-3G2E1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	288	DIMM		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				95 Cel		1GX72	1G	-40 Cel		DUAL	1	R-PDMA-N288		1.26 V	18.9 mm		4 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					80 mm
MTA4ATF51264HZ-3G2J1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2		64	MICROELECTRONIC ASSEMBLY				95 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N260		1.26 V	30.13 mm		2.5 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					69.6 mm
MTA8ATF1G64HZ-3G2J1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		64	MICROELECTRONIC ASSEMBLY				95 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N260		1.26 V	30.13 mm		3.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					69.6 mm
MTA9ASF1G72PZ-3G2J3	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				95 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF1G72AZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT18KDF2G72AZ-1G6A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm		4 mm		154618822656 bit	1.235 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					133.35 mm
MTA16ATF1G64HZ-2G1A2	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		64	MICROELECTRONIC ASSEMBLY				85 Cel		1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					69.6 mm
MTA36ADS2G72PZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA72ASS4G72LZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT4VDDT1664HY-335M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		2.7 V	31.9 mm		2.45 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX					67.6 mm
MT72JSZS4G72LZ-1G9N1A7	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		7.55 mm		309237645312 bit	1.425 V	SELF REFRESH; WD-MAX					133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.