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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT9LSDT1672G-133G2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2790 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	55 Cel	3-STATE	16MX72	16M	0 Cel		DUAL		R-PDMA-N168			133 MHz		Not Qualified	1207959552 bit						.018 Amp			5.4 ns
MT8LSDT1664AY-133G3	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2480 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N168			133 MHz		Not Qualified	1073741824 bit						.016 Amp			5.4 ns
MT16LSDT3264AY-133G3	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4960 mA	33554432 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N168			133 MHz		Not Qualified	2147483648 bit						.032 Amp			5.4 ns
MT42L64M32D1LF-18IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA		4,8,16		COMMON		1.2,1.8		GRID ARRAY, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE			-40 Cel		BOTTOM		S-PBGA-B168			533 MHz		Not Qualified	2147483648 bit						.000025 Amp	4,8,16		5.5 ns
MT46H128M32L2KQ-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm	208 MHz	12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H256M32L4JV-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	268435456 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm	208 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H256M32L4JV-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	268435456 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm	166 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H64M32LFMA-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.7 mm		12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H64M32LFMA-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.7 mm	166 MHz	12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	2,4,8,16	12 mm	5 ns
MT42L64M32D1KL-3IT:A	Micron Technology	LPDDR2 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		2147483648 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			12 mm	5.5 ns
MT44K16M36RB-093:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT44K16M36RB-093E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT44K16M36RB-093EIT:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K16M36RB-107E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K16M36RB-125:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K16M36RB-125E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-093:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT44K32M18RB-093E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT44K32M18RB-093EIT:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-093IT:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-107:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-107E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT44K32M18RB-125:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-125E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-125EIT:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT46H128M32L2KQ-5WT:B	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-20 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm	200 MHz	12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H128M32L2KQ-6WT:B	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-20 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm	166 MHz	12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H32M32LFMA-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	32MX32	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	.8 mm	200 MHz	14 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	14 mm	5 ns
MT46H64M32LFMA-5WT:B	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	64MX32	64M	-20 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	.7 mm	200 MHz	12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	12 mm	5 ns
MT42L128M32D2KL-25IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B168	1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L128M32D2KL-3IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B168	1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L192M32D3LE-3IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		201326592 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			192MX32	192M			BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L256M32D4KP-25IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L256M32D4KP-3IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT44K16M36RB-125F:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1					13.5 mm
MT44K32M18RB-125F:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1					13.5 mm
MT46H128M32L2KQ-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT42L128M32D1LF-25WT:A	Micron Technology	LPDDR2 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.2	1.2,1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-30 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.3 V	.75 mm	400 MHz	12 mm	Not Qualified	4294967296 bit	1.14 V	SELF CONTAINED REFRESH; ALSO REQUIRES 1.8 V SUPPLY	e1			.0001 Amp	4,8,16	12 mm	5.5 ns
MT42L256M32D2LG-25WT:A	Micron Technology	LPDDR2 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	194 mA	268435456 words	4,8,16	YES	COMMON	1.8	1.2,1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-30 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.8 mm	400 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM	e1			.0001 Amp	4,8,16	12 mm	5.5 ns
MT46H256M32L4JV-5WT:B	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	268435456 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm	200 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT42L16M32D1LG-25AAT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			16MX32	16M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.8 mm		12 mm		536870912 bit	1.7 V	SELF REFRESH	e1					12 mm	5.5 ns
MT16LSDT6464AY-13ED2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH	e4						5.4 ns
MT46H128M32L2KQ-6IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32L4JV-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32L4JV-6WT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX32	256M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32L4SA-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		90 mA	268435456 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-25 Cel		BOTTOM		S-PBGA-B168			208 MHz		Not Qualified	8589934592 bit				30	260	.00001 Amp	2,4,8,16		5 ns
MT46H64M32LFMA-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.7 mm		12 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H64M32L2JG-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	64MX32	64M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.95 V	.9 mm	200 MHz	12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH					2,4,8,16	12 mm	5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.