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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT46H64M32L2JG-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	64MX32	64M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.95 V	.9 mm	166 MHz	12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		30	260		2,4,8,16	12 mm	6 ns
MT36LSDF12872G-133D1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH	e0						5.4 ns
MT18LSDT6472G-133D2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY				55 Cel		64MX72	64M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH	e0						5.4 ns
MT44K32M36RB-107EIT:A	Micron Technology	DDR DRAM	INDUSTRIAL	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		32MX36	32M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36RB-093EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		16MX36	16M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36RB-093F:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K16M36RB-107E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		16MX36	16M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36RB-107EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		16MX36	16M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-093E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-093F:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-107E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36RB-093E:BTR	Micron Technology	DDR3 DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4	YES	COMMON	1.35		36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	100 Cel	3-STATE	16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1075 MHz	13.5 mm		603979776 bit	1.28 V		e1			.225 Amp	2,4	13.5 mm
MT44K16M36RB-093EIT:BTR	Micron Technology	DDR3 DRAM	INDUSTRIAL	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4	YES	COMMON	1.35		36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	100 Cel	3-STATE	16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1075 MHz	13.5 mm		603979776 bit	1.28 V		e1	30	260	.225 Amp	2,4	13.5 mm
MT44K16M36RB-093F:BTR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4,8	NO	COMMON	1.35		36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	95 Cel		16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	1075.2 MHz	13.5 mm		603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K16M36RB-107E:BTR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2665 mA	16777216 words	2,4,8	NO	COMMON	1.35		36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	95 Cel		16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm		603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-093E:BTR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2620 mA	33554432 words	2,4,8	NO	COMMON	1.35		18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	95 Cel		32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	1075.2 MHz	13.5 mm		603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-107E:BTR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2565 mA	33554432 words	2,4,8	NO	COMMON	1.35		18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	95 Cel		32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm		603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-107EIT:BTR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2565 mA	33554432 words	2,4,8	NO	COMMON	1.35		18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	95 Cel		32MX18	32M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm		603979776 bit	1.28 V	AUTO REFRESH				.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-125E:ATR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4,8	NO	COMMON	1.35		18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	95 Cel		32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	800 MHz	13.5 mm		603979776 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4,8	13.5 mm
MT44K32M36RB-093E:ATR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1140 mA	33554432 words	2,4,8	NO	COMMON	1.35		36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	95 Cel		32MX36	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	1075.2 MHz	13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-107E:ATR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1070 mA	33554432 words	2,4,8	NO	COMMON	1.35		36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	95 Cel		32MX36	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-107EIT:ATR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1070 mA	33554432 words	2,4,8	NO	COMMON	1.35		36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	95 Cel		32MX36	32M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH				.225 Amp	2,4,8	13.5 mm
MT46H128M32L2KQ-48IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	4.8 ns
MT46H128M32L2KQ-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	4.8 ns
MT46H64M32LFKQ-5IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH						12 mm	5 ns
MT46H256M32L4LE-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX32	256M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT44K32M36RB-083F:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm			32MX36	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M36RB-093E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm			32MX36	32M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K32M36RB-093F:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm			32MX36	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M36RB-107E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm			32MX36	32M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K64M18RB-083F:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm			64MX18	64M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K64M18RB-093E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm			64MX18	64M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K64M18RB-093F:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm			64MX18	64M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K64M18RB-107E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm			64MX18	64M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
EDB5432BEPA-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			16MX32	16M			BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB5432BEPA-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX32	16M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
EDB5432BEPA-1DIT-F-R	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX32	16M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
EDB4432BBPA-1D-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	e1					12 mm
EDB4432BBPA-1D-F-R	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	e1					12 mm
EDB8132B4PB-8D-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB8132B4PM-1D-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168	1.3 V	.82 mm		12 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			12 mm
EDBA232B2PB-1D-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			512MX32	512M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.3 V	1 mm		12 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	e1	30	260			12 mm
EDBA232B2PF-1D-F-D	Micron Technology	LPDDR2 DRAM		168	TFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm			512MX32	512M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.3 V	1.02 mm		12 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	e1	30	260			12 mm
EDBM432B3PF-1D-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			384MX32	384M			BOTTOM	1	S-PBGA-B168	1.3 V	.92 mm		12 mm		12884901888 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
MT46H128M32L2KQ-5IT:BTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H64M32L2JG-6IT:ATR	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.9 mm		12 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	6 ns
MT46H128M32L2KQ-5WT:BTR	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-20 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H32M32LFMA-5IT:BTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX32	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.7 mm		12 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.