DIMM DRAM 378

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT16LSDF6464HG-13ED2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4560 mA	67108864 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N144				143 MHz		Not Qualified	4294967296 bit						.032 Amp		5.4 ns
MT8VDDT6464AY-40BF4	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3600 mA	67108864 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N184				200 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT8VDDT6464HDY-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1940 mA	67108864 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT9LSDT1672G-133G2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2790 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	55 Cel	3-STATE	16MX72	16M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	1207959552 bit						.018 Amp		5.4 ns
MT18VDDF12872G-40BD3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		8100 mA	134217728 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N184				200 MHz		Not Qualified	9663676416 bit						.09 Amp		.7 ns
MT18VDDF12872Y-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		8100 mA	134217728 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N184				200 MHz		Not Qualified	9663676416 bit						.09 Amp		.7 ns
MT36VDDF25672Y-40BF3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		12420 mA	268435456 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N184				200 MHz		Not Qualified	19327352832 bit						.18 Amp		.7 ns
MT18VDDF12872HY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		6210 mA	134217728 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	9663676416 bit						.09 Amp		.7 ns
MT8VDDT12832UY-6F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1640 mA	67108864 words		COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	64MX32	64M	0 Cel		DUAL		R-PDMA-N100				167 MHz		Not Qualified	2147483648 bit						.04 Amp		.7 ns
MT16JSF51264HZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2656 mA	536870912 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204				533 MHz		Not Qualified	34359738368 bit						.192 Amp
MT4VDDT3264AY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1920 mA	33554432 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N184				200 MHz		Not Qualified	2147483648 bit						.02 Amp		.7 ns
MT16HTF12864HZ-667G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1976 mA	134217728 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	8589934592 bit						.112 Amp		.45 ns
MT16HTF25664AZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2296 mA	268435456 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240				333 MHz		Not Qualified	17179869184 bit						.112 Amp
MT16HTF25664AZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2736 mA	268435456 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240				400 MHz		Not Qualified	17179869184 bit						.112 Amp
MT16VDDT12864AY-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5520 mA	134217728 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N184				200 MHz		Not Qualified	8589934592 bit						.08 Amp		.7 ns
MT8VDDT6464HDY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1940 mA	67108864 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT8JSF25664HDZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2040 mA	268435456 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	17179869184 bit						.096 Amp
MT9HTF6472RHZ-667G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1260 mA	67108864 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	4831838208 bit						.063 Amp		.45 ns
MT8LSDT1664AY-133G3	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2480 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	1073741824 bit						.016 Amp		5.4 ns
MT16LSDT3264AY-133G3	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4960 mA	33554432 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	2147483648 bit						.032 Amp		5.4 ns
MT4VDDT3264HIY-335J1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	32MX64	32M	-40 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	2147483648 bit								.7 ns
MT4VDDT3264HY-335J1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	2147483648 bit								.7 ns
MT16KSF51264HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			536870912 words		COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	34359738368 bit
MT8VDDT6464HY-335J1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3240 mA	67108864 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT18VDDT12872AY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4095 mA	134217728 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N184				200 MHz		Not Qualified	9663676416 bit								.7 ns
MT8KTF25664AZ-1G6K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1248 mA	268435456 words		COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240				800 MHz		Not Qualified	17179869184 bit						.096 Amp		.225 ns
MT8KTF51264AZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	536870912 words		COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N240				800 MHz		Not Qualified	34359738368 bit						.144 Amp		.225 ns
MT8KTF12864HZ-1G4G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1960 mA	134217728 words		COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	8589934592 bit						.096 Amp
MT8KTF51264HZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	536870912 words		COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204				800 MHz		Not Qualified	34359738368 bit						.144 Amp
MT8KTF51264HZ-1G9E5	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2008 mA	536870912 words		COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204				933 MHz		Not Qualified	34359738368 bit						.144 Amp
MT16JTF51264AZ-1G4M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX64	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4				133.35 mm
MT18KDF1G72PDZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	18.9 mm				77309411328 bit	1.283 V	AUTO/SELF REFRESH	e4				133.35 mm
MT8KTF25664AZ-1G4M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX64	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30.5 mm				17179869184 bit	1.283 V	AUTO/SELF REFRESH	e4				133.35 mm
MT18JSF1G72PDZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm				77309411328 bit	1.425 V	AUTO/SELF REFRESH	e4				133.35 mm
MT18JSF1G72PZ-1G6D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm				77309411328 bit	1.425 V	AUTO/SELF REFRESH	e4				133.35 mm
MT18KSF51272AZ-1G4K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM	e4				133.35 mm
MT16JTF51264HZ-1G4M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm				34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4				67.6 mm
MT16KTF51264HZ-1G4M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm				34359738368 bit	1.283 V	AUTO/SELF REFRESH	e4				67.6 mm
MT18JSF51272PZ-1G6M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	7830 mA	536870912 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	512MX72	512M	0 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N240		1.575 V	4 mm	800 MHz	30.175 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4			.216 Amp	133.35 mm	.225 ns
MT8VDDF6464AY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184		3.6 V	25.53 mm				4294967296 bit	2.3 V	AUTO/SELF REFRESH		30	260		133.35 mm
MT16HTS25664HY-667A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2336 mA	268435456 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			333 MHz		Not Qualified	17179869184 bit			e3			.112 Amp
MT16VDDF12864HY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5520 mA	134217728 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			200 MHz		Not Qualified	8589934592 bit			e3			.08 Amp		.7 ns
MT18HTF6472AY-53EB2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3060 mA	67108864 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	64MX72	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			267 MHz		Not Qualified	4831838208 bit			e3
MT4KTF12864HZ-1G6K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		128MX64	128M	0 Cel	MATTE TIN OVER NICKEL	ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX	e3				67.6 mm
MT16JTF51264AZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3176 mA	536870912 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	512MX64	512M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			667 MHz		Not Qualified	34359738368 bit			e3			.192 Amp
MT18HTF25672AZ-80EH1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1953 mA	268435456 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			400 MHz		Not Qualified	19327352832 bit			e3			.126 Amp		.4 ns
MT18HTF25672FDZ-667H1D6	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4480 mA	268435456 words		COMMON		1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	GOLD	DUAL		R-PDMA-N240				333 MHz		Not Qualified	19327352832 bit			e4
MT18HTS25672RHZ-80EH1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3123 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e3				67.6 mm	.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.