DIMM DRAM 378

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT18HVF51272PDZ-80EC1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V	18.05 mm		4 mm		38654705664 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4				133.35 mm
MT18JSF51272PDZ-1G6K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.575 V	30.5 mm		4 mm		38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX	e4				133.35 mm
MT9JSF25672AZ-1G4K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.575 V	30.5 mm		2.7 mm		19327352832 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX	e4				133.35 mm
MT72JSZS4G72LZ-1G9E2A7	Micron Technology	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY						4GX72	4G			DUAL	1	R-XDMA-N240	1.575 V	30.5 mm		4.67 mm		309237645312 bit	1.425 V	SELF REFRESH; WD-MAX					133.35 mm
MT36KDZS2G72PDZ-1G4E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	18.9 mm		4 mm		154618822656 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX					133.35 mm
MT8JTF51264HZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204	1.575 V	30.15 mm		3.8 mm		34359738368 bit	1.425 V	SELF REFRESH; WD-MAX					67.6 mm
MT18KDF1G72PDZ-1G4E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	18.9 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					133.35 mm
MT36KDZS2G72PZ-1G4E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			.8 mm	70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	18.9 mm		6.19 mm		154618822656 bit	1.283 V	SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		133.35 mm
MT36KSS2G72RHZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N204	1.45 V	30.15 mm		3.8 mm		154618822656 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					67.6 mm
MT36KSF1G72PZ-1G4K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	1.575 V	30.5 mm		4 mm		77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT9JSF25672AKZ-1G4K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N244	1.575 V	30.15 mm		3.8 mm		19327352832 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX					82 mm
MT9KSF25672AZ-1G4K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.5 mm		2.7 mm		19327352832 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					133.35 mm
MT4LSDT864HG-13EG2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				65 Cel		8MX64	8M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N144	3.6 V	25.53 mm		3.8 mm		536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX	e0				67.585 mm	5.4 ns
MT4LSDT864HY-133G2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				65 Cel		8MX64	8M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N144	3.6 V	25.53 mm		3.8 mm		536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX	e4				67.585 mm	5.4 ns
MT18VDDF12872G-335D3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		7290 mA	134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	Gold (Au)	DUAL		R-PDMA-N184			166 MHz		Not Qualified	9663676416 bit			e4			.09 Amp		.7 ns
MT18KBZS1G72AKZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	17.91 mm		3.8 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX					82 mm
MT36HTF1G72FZ-667C1D6	Micron Technology	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm			1GX72	1G			DUAL	1	R-XDMA-N240	1.9 V	30.5 mm		5.1 mm		77309411328 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT16HTF25664HZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3440 mA	268435456 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N200			333 MHz		Not Qualified	17179869184 bit				30	260	.112 Amp
MT16HTF25664HZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3760 mA	268435456 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4			.112 Amp	67.6 mm
MT18HTF25672PKZ-80EH1	Micron Technology		COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4230 mA	268435456 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N244			400 MHz		Not Qualified	19327352832 bit				30	260			.4 ns
MT36HTF51272FZ-667H1D6	Micron Technology			240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4480 mA	536870912 words		COMMON		1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm		3-STATE	512MX72	512M		GOLD	DUAL		R-PDMA-N240			333 MHz		Not Qualified	38654705664 bit			e4
MT8HTF12864HDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1430 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.45 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200	3.6 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4			.056 Amp	67.6 mm	.4 ns
MT8HTF12864HDZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1790 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.45 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200	3.6 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; WD-MAX	e4			.056 Amp	67.6 mm	.4 ns
MT9HTF12872PZ-667H1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1665 mA	134217728 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	GOLD	DUAL		R-PDMA-N240			333 MHz		Not Qualified	9663676416 bit			e4			.063 Amp		.45 ns
MT9HTF12872RHZ-80EH1	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1890 mA	134217728 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200			400 MHz		Not Qualified	9663676416 bit				30	260	.063 Amp		.4 ns
MT9HVF12872PKZ-80EH1	Micron Technology		COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3015 mA	134217728 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N244			400 MHz		Not Qualified	9663676416 bit				30	260	.063 Amp
MT9JSF25672AZ-1G9K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	1.575 V	30.5 mm		2.7 mm		19327352832 bit	1.425 V	SELF REFRESH; WD-MAX					133.35 mm
MTA9ASF51272AZ-2G1A1	Micron Technology	DDR4 DRAM MODULE	OTHER	284	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N284	1.26 V	31.38 mm		2.61 mm		38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT9KSF51272HZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		512MX72	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					67.6 mm
MTA18ADF1G72PZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF1G72HZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MTA18ASF1G72PDZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA36ASF2G72LZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT8KTF25664HZ-1G6M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	268435456 words	YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm	800 MHz	3.8 mm	Not Qualified	17179869184 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX	e4			.096 Amp	67.6 mm
MT36HTF51272PZ-80EH1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6150 mA	536870912 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	512MX72	512M	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N240	1.9 V	4 mm	400 MHz	30.175 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4			.252 Amp	133.35 mm	.45 ns
MT36HVS51272PZ-80EH1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6246 mA	536870912 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V	4 mm	400 MHz	17.9 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4			.252 Amp	133.35 mm
MT18HVS25672PKZ-80EH1	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words			1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V	3.8 mm		18.2 mm	Not Qualified	19327352832 bit	1.7 V	AUTO REFRESH	e4				82 mm
MT16JSF51264HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3016 mA	536870912 words	YES	COMMON	1.5	1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N204	1.575 V	3.8 mm	667 MHz	30 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH				.192 Amp	67.6 mm
MT18HVS25672PKZ-80EM1	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N244	1.9 V	18.3 mm		3.8 mm		19327352832 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX					82 mm
MT8HTF6464HDY-667D3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200	1.9 V	3.8 mm	333 MHz	30.5 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4			.056 Amp	67.6 mm	.45 ns
MT4HTF3264AY-53ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1360 mA	33554432 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N240			267 MHz		Not Qualified	2147483648 bit								.5 ns
MT8HTF6464HDY-53ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1380 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200			266 MHz		Not Qualified	4294967296 bit						.056 Amp		.5 ns
MT16HTF6464AY-40EB2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1880 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N240			200 MHz		Not Qualified	4294967296 bit						.08 Amp		.6 ns
MT4HTF3264HY-53ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1360 mA	33554432 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200			267 MHz		Not Qualified	2147483648 bit						.028 Amp		.5 ns
MT16HTF12864AY-53ED4	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1856 mA	134217728 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N240			266 MHz		Not Qualified	8589934592 bit						.112 Amp		.5 ns
MT16VDDF12864HG-335D2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3280 mA	134217728 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N200	2.7 V		167 MHz		Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH	e0			.08 Amp		.7 ns
MT18HTF12872AY-667D4	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3240 mA	134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V		333 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4
MT36HTF25672PY-667D1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					45 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.