TFBGA DRAM 587

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT40A1G8SA-062EAIT:E	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	190 mA	1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		3-STATE	1GX8	1G	-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH				.018 Amp	8	11 mm
MT40A1G8SA-062EAUT:E	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	200 mA	1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	125 Cel		3-STATE	1GX8	1G	-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH				.022 Amp	8	11 mm
MT40A512M16LY-062EAIT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	270 mA	536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH				.018 Amp	8	13.5 mm
D2516ECMDXGJDI-U	Kingston Technology Company	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96			1.2 mm		7.5 mm	4294967296 bit		SELF REFRESH; BACKWARD COMPATIBLE TO 1.5V VDD					4,8	13.5 mm
MT53E768M32D4DE-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	105 Cel		3-STATE	768MX32	768M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.14 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2FW-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel		3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DE-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel		3-STATE	768MX32	768M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.14 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2FW-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	105 Cel		3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
IS43QR16256B-083RBLI-TR	Integrated Silicon Solution	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	375 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm	1200.48 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		30	260	.058 Amp	8	13.5 mm
MT40A512M16LY-062EIT:ETR	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			512MX16	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MT40A1G16KH-062EAUT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	299 mA	1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	125 Cel			1GX16	1G	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	13 mm
MT40A2G8JE-062EAUT:E	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	162 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	125 Cel			2GX8	2G	-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		30	260	.043 Amp	8	11 mm
MT40A1G16KH-062EAIT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	299 mA	1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			1GX16	1G	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	13 mm
MT40A2G8JE-062EAAT:E	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	162 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	105 Cel			2GX8	2G	-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	11 mm
MT40A512M16TB-062E:R	Micron Technology	DDR4 DRAM		96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	NO		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH		30	260		8	13 mm
MT41K2G4RKB-107:P	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	163 mA	2147483648 words	8	YES	COMMON	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		3-STATE	2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	933 MHz	8 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH		30	260	.022 Amp	8	10.5 mm
MT53E512M16D1FW-046AIT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2136.7 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M16D1FW-046AAT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel			512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2136.7 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M32D2FW-046AUT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M32D2FW-046AIT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT61M256M32JE-10AAT:A	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16	.75 mm	105 Cel		3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm	1500 MHz	12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH						14 mm
MT61M256M32JE-12AAT:A	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16	.75 mm	105 Cel		3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm	1500 MHz	12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH						14 mm
MT40A4G4SA-062E:F	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words	8	YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel			4GX4	4G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A1G16KD-062EIT:ETR	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			1GX16	1G	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13 mm
MT40A1G16KD-062EIT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			1GX16	1G	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13 mm
MT40A2G8SA-062E:F	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel			2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT53E512M64D2HJ-046WT:B	Micron Technology	LPDDR4 DRAM		556	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA556,29X29,16		.4 mm	85 Cel			512MX64	512M	-25 Cel		BOTTOM	1	S-PBGA-B556		1.17 V	1.1 mm	2136.7 MHz	12.4 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	12.4 mm
MT53E128M32D2FW-046IT:A	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			128MX32	128M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E128M32D2FW-046WT:A	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	85 Cel			128MX32	128M	-25 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT40A512M16TB-062E:J	Micron Technology	DDR4 DRAM		96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	NO		512MX16	512M	0 Cel		BOTTOM		R-PBGA-B96		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	13.5 mm
MT40A1G8SA-062E:J	Micron Technology	DDR4 DRAM		78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A2G4SA-062E:J	Micron Technology	DDR4 DRAM		78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A2G4SA-062E:R	Micron Technology	DDR4 DRAM		78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT47H32M8BP-3:BTR	Micron Technology	DDR2 DRAM		60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	250 mA	33554432 words	4,8	YES	COMMON	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel			32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	8 mm	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.04 Amp	4,8	12 mm	.45 ns
MT47H64M16NF-25EAAT:MTR	Micron Technology	DDR2 DRAM		84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	260 mA	67108864 words	4,8	YES	COMMON	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	105 Cel			64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.01 Amp	4,8	12.5 mm	.4 ns
MT53E1G32D2FW-046AUT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	125 Cel			1GX32	1G	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E256M32D2FW-046AAT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	8589934592 bit	1.06 V						16,32	14.5 mm
AS4C256M16D3LC-12BANTR	Alliance Memory	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	228 mA	268435456 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel		3-STATE	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	7.5 mm	4294967296 bit	1.283 V		e1	30	260	.0096 Amp	4,8	13.5 mm
AS4C512M16D3LB-12BINTR	Alliance Memory	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	122 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel			512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY				.06 Amp	4,8	13.5 mm
AS4C512M16D3LC-10BINTR	Alliance Memory	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	360 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-12BCN	Alliance Memory	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-12BINTR	Alliance Memory	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-12BCNTR	Alliance Memory	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-10BIN	Alliance Memory	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	360 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-12BIN	Alliance Memory	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-10BCN	Alliance Memory	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	360 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
MT40A8G4NEA-062E:F	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	308 mA	8589934592 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X11,32		.8 mm	95 Cel			8GX4	8G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm	34359738368 bit	1.14 V							11 mm
MT53E256M32D2FW-046AIT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel		3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	8589934592 bit	1.06 V						16,32	14.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.