TFBGA DRAM 587

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT53E256M16D1FW-046AAT:B	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel	3-STATE	256MX16	256M	-40 Cel	BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	4294967296 bit	1.06 V			16,32	14.5 mm
MT53E768M64D4HJ-046AAT:A	Micron Technology	LPDDR4 DRAM	556	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	320 mA	805306368 words	16,32	YES	COMMON	1.1	64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA556,29X29,16	.4 mm	105 Cel	3-STATE	768MX64	768M	-40 Cel	BOTTOM	1	S-PBGA-B556	1.17 V	1.1 mm	2133 MHz	12.4 mm	51539607552 bit	1.06 V		.0032 Amp	16,32	12.4 mm	3.5 ns
MT53E768M64D4HJ-046AIT:A	Micron Technology	LPDDR4 DRAM	556	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	320 mA	805306368 words	16,32	YES	COMMON	1.1	64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA556,29X29,16	.4 mm	95 Cel	3-STATE	768MX64	768M	-40 Cel	BOTTOM	1	S-PBGA-B556	1.17 V	1.1 mm	2133 MHz	12.4 mm	51539607552 bit	1.06 V		.0032 Amp	16,32	12.4 mm	3.5 ns
MT53E512M64D4HJ-046AAT:D	Micron Technology	LPDDR4 DRAM	556	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	390 mA	536870912 words	16,32	YES	COMMON	1.1	64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA556,29X29,16	.4 mm	105 Cel	3-STATE	512MX64	512M	-40 Cel	BOTTOM	1	S-PBGA-B556	1.17 V	1.1 mm	2133 MHz	12.4 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	.0036 Amp	16,32	12.4 mm	3.5 ns
MT53E512M64D4HJ-046AIT:D	Micron Technology	LPDDR4 DRAM	556	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	390 mA	536870912 words	16,32	YES	COMMON	1.1	64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA556,29X29,16	.4 mm	95 Cel	3-STATE	512MX64	512M	-40 Cel	BOTTOM	1	S-PBGA-B556	1.17 V	1.1 mm	2133 MHz	12.4 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	.0036 Amp	16,32	12.4 mm	3.5 ns
MT53E1536M32D4DE-046AIT:B	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	260 mA	1610612736 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32	.8 mm	95 Cel	3-STATE	1536MX32	1536M	-40 Cel	BOTTOM	1	R-PBGA-B200	1.17 V	1.14 mm	2133 MHz	10 mm	51539607552 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	.00075 Amp	16,32	14.5 mm
MT53E1536M32D4DE-046AAT:B	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	260 mA	1610612736 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32	.8 mm	105 Cel	3-STATE	1536MX32	1536M	-40 Cel	BOTTOM	1	R-PBGA-B200	1.17 V	1.14 mm	2133 MHz	10 mm	51539607552 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	.00075 Amp	16,32	14.5 mm
MT40A512M16TB-062EIT:R	Micron Technology	DDR4 DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M	-40 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH		8	13 mm
MT53E512M64D4HJ-046AUT:D	Micron Technology	LPDDR4 DRAM	556	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	390 mA	536870912 words	16,32	YES	COMMON	1.1	64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA556,29X29,16	.4 mm	125 Cel	3-STATE	512MX64	512M	-40 Cel	BOTTOM	1	S-PBGA-B556	1.17 V	1.1 mm	2133 MHz	12.4 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	.0036 Amp	16,32	12.4 mm	3.5 ns
MT40A1G16TD-062EAUT:F	Micron Technology	DDR4 DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	200 mA	1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	85 Cel	3-STATE	1GX16	1G	-40 Cel	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	.038 Amp	8	13 mm
MT40A2G8AG-062EAAT:F	Micron Technology	DDR4 DRAM	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	81 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel		2GX8	2G	-40 Cel	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	.084 Amp	8	11 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.