TFBGA DRAM 587

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41K512M4DA-107:K	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	164 mA	536870912 words	8	YES	COMMON	1.35	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	933 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY				.012 Amp	8	10.5 mm	.195 ns
IS43LR32160C-6BLI	Integrated Silicon Solution	DDR1 DRAM	INDUSTRIAL	90	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	130 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		-40 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1.2 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16	13 mm	5.5 ns
IS43TR16256A-125KBLI	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH						13 mm	.1 ns
IS43TR16256A-15HBLI	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1	30	260			13 mm	.125 ns
IS43TR16256AL-125KBLI	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1	10	260			13 mm	.1 ns
IS43TR16256AL-125KBL	Integrated Silicon Solution	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1	10	260			13 mm	.1 ns
IS46TR16256AL-125KBLA2	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	243 mA	268435456 words	4,8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	105 Cel	3-STATE	256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH				.016 Amp	4,8	13 mm	.1 ns
MT41K1G8TRF-107:E	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			1GX8	1G				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9.5 mm		8589934592 bit	1.283 V	SELF REFRESH						11.5 mm
MT41K1G8TRF-125IT:E	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	243 mA	1073741824 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX8	1G		0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	9.5 mm	Not Qualified	8589934592 bit	1.283 V	SELF REFRESH	e0			.036 Amp	8	11.5 mm	.225 ns
MT41K2G4TRF-107:E	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			2GX4	2G				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9.5 mm		8589934592 bit	1.283 V	SELF REFRESH						11.5 mm
MT41K1G4RH-107:E	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	251 mA	1073741824 words	8	YES	COMMON	1.35	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel	3-STATE	1GX4	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	933 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH				.016 Amp	8	10.5 mm
MT41K256M16HA-107:E	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	274 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1			.016 Amp	8	14 mm
MT41K256M16HA-107IT:E	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	274 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1			.016 Amp	8	14 mm
MT41K256M16RE-15EIT:D	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	285 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	667 MHz	10 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH				.02 Amp	8	14 mm
MT41K512M8RH-107:E	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	251 mA	536870912 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX8	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm	933 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.016 Amp	8	10.5 mm
MT41K512M8RH-107IT:E	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	251 mA	536870912 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	933 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH				.016 Amp	8	10.5 mm
MT41K512M8RH-125IT:E	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	536870912 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX8	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1			.016 Amp	8	10.5 mm
MT41K512M16TNA-107:E	Micron Technology	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm			512MX16	512M	1.283 V		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.5 MHz	10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260		4,8	14 mm
MT41K512M16TNA-125IT:E	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32	DRAMs	.8 mm	95 Cel		512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.425 V	1.2 mm	800 MHz	10 mm	Not Qualified	8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1					14 mm
MT41K128M16HA-15EIT:D	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	425 mA	134217728 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH				.012 Amp	8	14 mm	.255 ns
MT41K256M8DA-107IT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						10.5 mm
MT42L256M64D4EV-18WT:A	Micron Technology	LPDDR2 DRAM	OTHER	253	TFBGA	8192	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	268435456 words	4,8,16	YES	COMMON	1.8	1.2,1.8	64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA253,17X17,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX64	256M		-30 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B253		1.95 V	1.2 mm	533 MHz	11 mm	Not Qualified	17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM	e1			.002 Amp	4,8,16	11 mm	5.5 ns
MT42L256M64D4EV-25WT:A	Micron Technology	LPDDR2 DRAM	OTHER	253	TFBGA	8192	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	194 mA	268435456 words	4,8,16	YES	COMMON	1.8	1.2,1.8	64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA253,17X17,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.95 V	1.2 mm	400 MHz	11 mm	Not Qualified	17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				.002 Amp	4,8,16	11 mm	5.5 ns
W9751G6KB25I	Winbond Electronics	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	200 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.008 Amp	4,8	12.5 mm	.4 ns
MT47H64M16HR-25E:HTR	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		65536 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64KX16	64K		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm		1048576 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT41J128M16JT-093J:K	Micron Technology	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			128MX16	128M				BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						14 mm
IS43TR16128B-15HBLI	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	ASYNCHRONOUS	286 mA	134217728 words	4,8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.014 Amp	4,8	13 mm	.255 ns
W971GG6KB25I	Winbond Electronics	DDR2 DRAM		84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	185 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M				BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.008 Amp	4,8	12.5 mm	.4 ns
MT41K256M16HA-125IT:ETR	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT47H128M8CF-3AAT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel		128MX8	128M		-40 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH						10 mm	.45 ns
MT47H128M8SH-187E:M	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	533 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.35 ns
MT47H256M4SH-25E:M	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.4 ns
MT47H64M16NF-187E:M	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	533 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	12.5 mm	.35 ns
MT47H128M4SH-25E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX4	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	4,8	10 mm	.4 ns
MT47H32M16NF-187E:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	225 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	533 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	4,8	12.5 mm	.35 ns
MT47H64M8SH-25EIT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	4,8	10 mm	.4 ns
MT47H1G4WTR-25E:C	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G		0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		9 mm		4294967296 bit	1.7 V	SELF REFRESH						11.5 mm
MT47H512M8WTR-25E:C	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		9 mm		4294967296 bit	1.7 V	SELF REFRESH						11.5 mm
MT48LC32M8A2BB-6A:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,8X15,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M		0 Cel		BOTTOM	1	S-PBGA-B60		3.6 V	1.2 mm	167 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	16 mm	5.4 ns
MT48LC32M8A2BB-7E:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,8X15,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M		0 Cel		BOTTOM	1	S-PBGA-B60		3.6 V	1.2 mm	143 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	16 mm	5.4 ns
MT48LC64M4A2BB-6A:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		3.3		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		64MX4	64M		0 Cel		BOTTOM	1	S-PBGA-B60		3.6 V	1.2 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH						16 mm	5.4 ns
MT41K256M8DA-125AAT:K	Micron Technology	DDR3L DRAM	AUTOMOTIVE	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	195 mA	268435456 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	125 Cel	3-STATE	256MX8	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	10.5 mm
MT47H128M8SH-25EAAT:M	Micron Technology	DDR2 DRAM		60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			128MX8	128M				BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10 mm	.4 ns
MT47H128M8SH-25EAIT:M	Micron Technology	DDR2 DRAM		60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	95 Cel	3-STATE	128MX8	128M		-40 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	4,8	10 mm	.4 ns
MT47H128M8HQ-3:ETR	Micron Technology	DDR2 DRAM	COMMERCIAL EXTENDED	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			11.5 mm	.45 ns
MT47H128M8CF-187E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	250 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	533 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.35 ns
MT47H128M8CF-25:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.4 ns
MT47H128M8CF-25E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260		4,8	10 mm	.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.