VFBGA DRAM 424

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
EDB2432B4MA-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm				64MX32	64M				BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB2432B4MA-1DAAT-F-RTR	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	105 Cel			32MX32	32M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V	SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB2432B4MA-1DAUT-F-D	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	125 Cel			64MX32	64M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB2432B4MA-1DAUT-F-RTR	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	125 Cel			32MX32	32M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDF8132A3MA-GD-F-D	Micron Technology	LPDDR3 DRAM		178	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm				256MX32	256M				BOTTOM	1	R-PBGA-B178		1.3 V	.85 mm		10.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; IT ALSO HAVE 0.65 MM PITCH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDFA232A2MA-GD-F-D	Micron Technology	LPDDR3 DRAM		178	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm				512MX32	512M				BOTTOM	1	R-PBGA-B178		1.3 V	1 mm		10.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; IT ALSO HAVE 0.65 MM PITCH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDFA232A2MA-JD-F-D	Micron Technology	LPDDR3 DRAM		178	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm				512MX32	512M				BOTTOM	1	R-PBGA-B178		1.3 V	1 mm		10.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; IT ALSO HAVE 0.65 MM PITCH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
AS4C16M32MS-7BCN	Alliance Memory	SYNCHRONOUS DRAM	OTHER	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel			16MX32	16M		-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm	536870912 bit	1.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
AS4C256M16D3A-12BIN	Alliance Memory	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel			256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.575 V	1 mm		9 mm	4294967296 bit	1.425 V	AUTO/SELF REFRESH						13 mm
MT52L256M64D2GN-107WT:B	Micron Technology	LPDDR3 DRAM		256	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				256MX64	256M			TIN SILVER COPPER	BOTTOM	1	S-PBGA-B256		1.3 V	.7 mm		14 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1					14 mm
EDB8132B4PM-1DAT-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm				256MX32	256M			Tin/Silver/Copper (Sn96.8Ag3.0Cu0.2)	BOTTOM	1	S-PBGA-B168		1.3 V	.82 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		30	260			12 mm
MT52L256M64D2LZ-107XT:B	Micron Technology	LPDDR3 DRAM	OTHER	216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	320 mA	268435456 words		YES	COMMON	1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16	.4 mm	105 Cel		3-STATE	256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm	933 MHz	12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM				.012 Amp		12 mm
EDF8164A3MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			128MX64	128M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.85 mm		11 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11 mm
EDFA164A2MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	1 mm		11 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11 mm
EDFA164A2MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	1 mm		11 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11 mm
EDFA364A3MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.85 mm		12.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			12.5 mm
EDFB164A1MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			512MX64	512M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.95 mm		12.5 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12.5 mm
EDFB164A1MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel			512MX64	512M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.95 mm		12.5 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12.5 mm
EDFP164A3PD-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	256	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		402653184 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm	85 Cel			384MX64	384M		-30 Cel		BOTTOM	1	S-PBGA-B256		1.3 V	.8 mm		14 mm	25769803776 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14 mm
W631GU6MB12I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	95 Cel			64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm		7.5 mm	1073741824 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
MT53B512M32D2DS-062AAT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	410 mA	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel			512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0033 Amp	16,32	14.5 mm
MT53B256M32D1NP-062AUT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	445 mA	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	125 Cel			256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.005 Amp	16,32	14.5 mm
MT53B512M32D2DS-062AIT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	400 mA	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel			512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0025 Amp	16,32	14.5 mm
MT53B256M32D1DS-062AUT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	445 mA	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	125 Cel			256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.005 Amp	16,32	14.5 mm
MT53B256M32D1DS-062AAT:C	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	410 mA	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel			256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0033 Amp	16,32	14.5 mm
MT48LC8M16A2B4-6AXIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel			8MX16	8M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e1	30	260			8 mm	5.4 ns
MT48LC4M16A2B4-75IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel			4MX16	4M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm	67108864 bit	3 V	AUTO/SELF REFRESH	e1	30	260			8 mm	5.4 ns
MT48LC16M16A2F4-6A:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	70 Cel			16MX16	16M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm	268435456 bit	3 V	AUTO REFRESH	e1	30	260			8 mm	5.4 ns
MT48LC16M16A2F4-6AIT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel			16MX16	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm	268435456 bit	3 V	AUTO REFRESH	e1					8 mm	5.4 ns
MT53D1024M32D4DT-046AAT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel			1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E256M32D2DS-046AAT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm	8589934592 bit	1.06 V			NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E768M32D4DT-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel		3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E768M32D4DT-053AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel		3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53B1024M32D4NQ-062WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel			1GX32	1G		-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1600 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
MT53B512M32D2NP-062WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel			512MX32	512M		-30 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260		16,32	14.5 mm
MT52L256M64D2PP-107WT:B	Micron Technology	LPDDR3 DRAM	OTHER	216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES	CONFIGURABLE	1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,12X12,16	.4 mm	85 Cel	NO	COMMON	256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm		12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
MT53E768M32D4DT-053AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel		3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
IS43LQ16128A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	NO	COMMON		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel			128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	.85 mm	1600 MHz	10 mm	2147483648 bit	1.7 V	terminal pitch-max					16,32	14.5 mm
W66CP2NQUAFJ	Winbond Electronics	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel			128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	4294967296 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX					16,32	14.5 mm
W66CP2NQUAGJ	Winbond Electronics	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel			128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1869.1 MHz	10 mm	4294967296 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX					16,32	14.5 mm
W66CP2NQUAHJ	Winbond Electronics	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel			128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2136.7 MHz	10 mm	4294967296 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX					16,32	14.5 mm
AS4C128M16MD4-062BAN	Alliance Memory	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		3-STATE	128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	2147483648 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX					16,32	14.5 mm
MT53B128M32D1DS-062AUT:A	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.65 mm	125 Cel			128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						14.5 mm
MT53B128M32D1DS-062AAT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.65 mm	105 Cel			128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						14.5 mm
W631GG6NB-12	Winbond Electronics	DDR3 DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	67108864 words	8	YES	COMMON	1.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	64MX16	64M		0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	800 MHz	7.5 mm	1073741824 bit	1.425 V					.04 Amp	8	13 mm	20 ns
W631GG6NB09I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	270 mA	67108864 words	8	YES	COMMON	1.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	1066 MHz	7.5 mm	1073741824 bit	1.425 V					.05 Amp	8	13 mm	20 ns
W631GG6NB12I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	67108864 words	8	YES	COMMON	1.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	800 MHz	7.5 mm	1073741824 bit	1.425 V					.04 Amp	8	13 mm	20 ns
W631GG6NB11I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	240 mA	67108864 words	8	YES	COMMON	1.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	933 MHz	7.5 mm	1073741824 bit	1.425 V					.045 Amp	8	13 mm	20 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.