VFBGA DRAM 424

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT46H8M16LFCF-75	Micron Technology	DDR1 DRAM	COMMERCIAL	60	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	105 mA	8388608 words	2,4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.9 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.0002 Amp	2,4,8	10 mm	6 ns
MT48H4M16LFB4-8:H	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	1.95 V	1 mm	125 MHz	8 mm	Not Qualified	67108864 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	1,2,4,8	8 mm	6 ns
MT48H4M16LFB4-8IT:H	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	1.95 V	1 mm	125 MHz	8 mm	Not Qualified	67108864 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	1,2,4,8	8 mm	6 ns
MT48LC2M32B2B5-7:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	225 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX32	2M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3.6 V	1 mm	143 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e1			.002 Amp	1,2,4,8	13 mm	5.5 ns
MT46H16M16LFBF-6IT:A	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	100 mA	16777216 words	2,4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.95 V	1 mm	166 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8	9 mm	5 ns
MT46H16M16LFBF-75:A	Micron Technology	DDR1 DRAM	COMMERCIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	100 mA	16777216 words	2,4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60	1.95 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8	9 mm	6 ns
MT48H8M16LFB4-8:J	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX16	8M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54	1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			8 mm	6 ns
MT48H4M16LFB4-75IT:H	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	75 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	1.95 V	1 mm	133 MHz	8 mm	Not Qualified	67108864 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	1,2,4,8	8 mm	6 ns
MT48LC2M32B2B5-7IT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	225 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3.6 V	1 mm	143 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e1			.002 Amp	1,2,4,8	13 mm	5.5 ns
W632GG6NB-12	Winbond Electronics	DDR3 DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words				1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX16	128M		0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W632GG6NB12I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words				1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W632GG6NB12J	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words				1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W632GU6NB11I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words				1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W632GU6NB12I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words				1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
MT53E256M32D2DS-053AIT:BTR	Micron Technology	LPDDR4X DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel	3-STATE	256MX32	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX	e1	30	260		16,32	14.5 mm
AS4C128M16D3LC-12BINTR	Alliance Memory	DDR3L DRAM	INDUSTRIAL	96	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	240 mA	134217728 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	128MX16	128M	1.283 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1 mm	800 MHz	7.5 mm		2147483648 bit	1.283 V	AUTO REFRESH, SELF REFRESH				.015 Amp	4,8	13 mm
MT53E128M32D2DS-046AAT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	105 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E128M32D2DS-046AUT:A	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	125 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E128M16D1DS-053AAT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	105 Cel		128MX16	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm		2147483648 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						14.5 mm
MT53B128M32D1DS-062AIT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	95 Cel		128MX32	128M	1.06 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			14.5 mm
MT53E128M16D1DS-046AIT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	85 Cel		128MX16	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm		2147483648 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E128M16D1DS-053AIT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	85 Cel		128MX16	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm		2147483648 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E128M16D1DS-046AAT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	105 Cel		128MX16	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm		2147483648 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E128M32D2DS-053AUT:A	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	125 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT42L64M32D1TK-18AAT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	220 mA	67108864 words	4,8,16	YES	COMMON	1.2	1.2,1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25	DRAMs	.65 mm	105 Cel	3-STATE	64MX32	64M		-40 Cel		BOTTOM	1	R-PBGA-B134	1.3 V	.7 mm	533 MHz	10 mm	Not Qualified	2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM				.000025 Amp	4,8,16	11.5 mm	5.5 ns
MT46H128M32L2KQ-48IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	4.8 ns
MT46H128M32L2KQ-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M		-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	4.8 ns
MT46H64M32LFKQ-5IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M		-40 Cel		BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH						12 mm	5 ns
MT46H256M32L4LE-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX32	256M		-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT48LC4M32B2B5-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		4194304 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M		-40 Cel		BOTTOM	1	R-PBGA-B90	3.6 V	1 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
EDB5432BEBH-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			16MX32	16M				BOTTOM	1	R-PBGA-B134	1.3 V	1 mm		10 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11.5 mm
EDB5432BEBH-1DAUT-F-D	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	125 Cel		16MX32	16M		-40 Cel		BOTTOM	1	R-PBGA-B134	1.3 V	1 mm		10 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB5432BEBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		16MX32	16M		-40 Cel		BOTTOM	1	R-PBGA-B134	1.3 V	1 mm		10 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB5432BEPA-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			16MX32	16M				BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB5432BEPA-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX32	16M		-40 Cel		BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
EDB5432BEPA-1DIT-F-R	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX32	16M		-40 Cel		BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
EDF8164A3PK-JD-F-D	Micron Technology	LPDDR3 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX64	128M				BOTTOM	1	S-PBGA-B216	1.3 V	.7 mm		12 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
EDF8164A3PK-JD-F-R	Micron Technology	LPDDR3 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX64	128M				BOTTOM	1	S-PBGA-B216	1.3 V	.7 mm		12 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
EDFA164A2PK-GD-F-D	Micron Technology	LPDDR3 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			256MX64	256M				BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
EDFA164A2PK-JD-F-D	Micron Technology	LPDDR3 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			256MX64	256M				BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
EDB4432BBBJ-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			128MX32	128M			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134	1.95 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
EDB4432BBBJ-1DAIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B134	1.3 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB4432BBBJ-1DAUT-F-D	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	125 Cel		128MX32	128M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134	1.95 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
MT48LC16M16A2B4-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M		0 Cel		BOTTOM	1	S-PBGA-B54	3.6 V	1 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			8 mm	5.4 ns
MT48LC2M32B2B5-7ITGTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2097152 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX32	2M		-40 Cel		BOTTOM	1	R-PBGA-B90	3.6 V	1 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH						13 mm	5.5 ns
EDB8164B4PK-1D-F-D	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX64	128M				BOTTOM	1	S-PBGA-B220	1.3 V	.7 mm		14 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			14 mm
EDB8164B4PR-1D-F-D	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX64	128M				BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
EDB8164B4PT-1D-F-D	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX64	128M				BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.