VFBGA DRAM 424

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT42L128M32D2MH-25IT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			128MX32	128M			BOTTOM	1	R-PBGA-B134	1.95 V	1 mm		11 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT42L128M64D4KJ-3IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX64	128M			BOTTOM	1	S-PBGA-B216	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L128M64D4LD-25IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B220	1.95 V	1 mm		14 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT42L128M64D4LD-3IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B220	1.95 V	1 mm		14 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT42L192M32D3LE-3IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		201326592 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			192MX32	192M			BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L256M32D4KP-25IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L256M32D4KP-3IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L64M32D1KL-25IT:A	Micron Technology	LPDDR2 DRAM			VFBGA				SINGLE BANK PAGE BURST		1	CMOS			SYNCHRONOUS		67108864 words		YES		1.2		32				.5 mm			64MX32	64M				1		1.3 V	.8 mm		12 mm		2147483648 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	5.5 ns
MT42L64M64D2KH-25IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			64MX64	64M			BOTTOM	1	S-PBGA-B216	1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L64M64D2KH-3IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			64MX64	64M			BOTTOM	1	S-PBGA-B216	1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L64M64D2MP-25IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			64MX64	64M			BOTTOM	1	S-PBGA-B220	1.95 V	.8 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT48H32M16LFB4-6AT:C	Micron Technology	DDR DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		32MX16	32M	-40 Cel		BOTTOM	1	S-PBGA-B54	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						8 mm	5 ns
MT46H64M32LFCX-6IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90	1.95 V	1 mm		9 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			13 mm	5 ns
MT48LC8M16A2B4-6A:L	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	330 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3.6 V	1 mm	167 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e1			.002 Amp	1,2,4,8	8 mm	5.4 ns
MT42L32M32D2AC-25AAT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			32MX32	32M			BOTTOM	1	R-PBGA-B134	1.95 V	1 mm		10 mm		1073741824 bit	1.7 V	SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm	5.5 ns
MT42L32M32D2AC-25AIT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		32MX32	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134	1.95 V	1 mm		10 mm		1073741824 bit	1.7 V	SELF REFRESH	e1					11.5 mm	5.5 ns
MT46H128M16LFB7-5AIT:B	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel		BOTTOM	1	S-PBGA-B60	1.95 V	1 mm		10 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH						10 mm	5 ns
MT46H64M32LFCX-5AIT:B	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-40 Cel		BOTTOM	1	R-PBGA-B90	1.95 V	1 mm		9 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH						13 mm	5 ns
MT48LC2M32B2B5-6A:J	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	180 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3.6 V	1 mm	166 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e1			.0025 Amp	1,2,4,8	13 mm	5.4 ns
MT46H128M32L2KQ-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT48H32M16LFB4-6AAT:C	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		32MX16	32M	-40 Cel		BOTTOM	1	S-PBGA-B54	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						8 mm	5 ns
MT48LC2M32B2B5-6AAAT:J	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		2097152 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		2MX32	2M	-40 Cel		BOTTOM	1	R-PBGA-B90	3.6 V	1 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
MT48LC2M32B2B5-6AAIT:J	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		2097152 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX32	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3.6 V	1 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e1	30	260			13 mm	5.4 ns
MT42L128M32D1LF-25WT:A	Micron Technology	LPDDR2 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.2	1.2,1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-30 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.3 V	.75 mm	400 MHz	12 mm	Not Qualified	4294967296 bit	1.14 V	SELF CONTAINED REFRESH; ALSO REQUIRES 1.8 V SUPPLY	e1			.0001 Amp	4,8,16	12 mm	5.5 ns
MT48LC16M16A2B4-7E:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54	3.6 V	1 mm	143 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e1	30	260	.0025 Amp	1,2,4,8	8 mm	5.4 ns
MT42L16M32D1AC-25AAT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			16MX32	16M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134	1.95 V	1 mm		10 mm		536870912 bit	1.7 V	SELF REFRESH	e1					11.5 mm	5.5 ns
MT42L16M32D1AC-25AIT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134	1.95 V	1 mm		10 mm		536870912 bit	1.7 V	SELF REFRESH	e1					11.5 mm	5.5 ns
MT42L128M32D1GU-18WT:A	Micron Technology	LPDDR2 DRAM	OTHER	134	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	134217728 words	4,8,16	YES	COMMON	1.8	1.2,1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25	DRAMs	.65 mm	85 Cel	3-STATE	128MX32	128M	-30 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134	1.95 V	.7 mm	533 MHz	10 mm	Not Qualified	4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM	e1			.0001 Amp	4,8,16	11.5 mm	5.5 ns
MT42L128M32D1LH-25WT:A	Micron Technology	LPDDR2 DRAM	OTHER	216	VFBGA	8192	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.8	1.2,1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16	DRAMs	.4 mm	85 Cel	3-STATE	128MX32	128M	-30 Cel		BOTTOM	1	S-PBGA-B216	1.95 V	.65 mm	400 MHz	12 mm	Not Qualified	4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				.0001 Amp	4,8,16	12 mm	5.5 ns
MT42L128M64D2LL-18WT:A	Micron Technology	LPDDR2 DRAM	OTHER	216	VFBGA	8192	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	134217728 words	4,8,16	YES	COMMON	1.8	1.2,1.8	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16	DRAMs	.4 mm	85 Cel	3-STATE	128MX64	128M	-30 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B216	1.95 V	.8 mm	533 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM	e1			.002 Amp	4,8,16	12 mm	5.5 ns
MT42L128M64D2LL-25WT:A	Micron Technology	LPDDR2 DRAM	OTHER	216	VFBGA	8192	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.8	1.2,1.8	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16	DRAMs	.4 mm	85 Cel	3-STATE	128MX64	128M	-30 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B216	1.95 V	.8 mm	400 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM	e1			.002 Amp	4,8,16	12 mm	5.5 ns
MT42L128M64D2MC-18WT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B240	1.95 V	.8 mm		14 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT42L128M64D2MP-25WT:A	Micron Technology	LPDDR2 DRAM	OTHER	220	VFBGA	8192	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.8	1.2,1.8	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA220,27X27,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX64	128M	-30 Cel		BOTTOM	1	S-PBGA-B220	1.95 V	.8 mm	400 MHz	14 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				.002 Amp	4,8,16	14 mm	5.5 ns
MT42L256M32D2LG-25WT:A	Micron Technology	LPDDR2 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	194 mA	268435456 words	4,8,16	YES	COMMON	1.8	1.2,1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-30 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.8 mm	400 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM	e1			.0001 Amp	4,8,16	12 mm	5.5 ns
MT42L256M32D2LK-18WT:A	Micron Technology	LPDDR2 DRAM	OTHER	216	VFBGA	8192	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	268435456 words	4,8,16	YES	COMMON	1.8	1.2,1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16	DRAMs	.4 mm	85 Cel	3-STATE	256MX32	256M	-30 Cel		BOTTOM	1	S-PBGA-B216	1.95 V	.8 mm	533 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				.0001 Amp	4,8,16	12 mm	5.5 ns
MT42L256M64D4LD-25WT:A	Micron Technology	LPDDR2 DRAM	OTHER	220	VFBGA	8192	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	194 mA	268435456 words	4,8,16	YES	COMMON	1.8	1.2,1.8	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA220,27X27,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX64	256M	-30 Cel		BOTTOM	1	S-PBGA-B220	1.95 V	1 mm	400 MHz	14 mm	Not Qualified	17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				.002 Amp	4,8,16	14 mm	5.5 ns
MT42L256M64D4LM-18WT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			256MX64	256M			BOTTOM	1	S-PBGA-B216	1.95 V	1 mm		12 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L256M64D4LM-25WT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			256MX64	256M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B216	1.95 V	1 mm		12 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM	e1					12 mm
MT48LC4M16A2B4-6A:J	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		BOTTOM	1	S-PBGA-B54	3.6 V	1 mm	167 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	8 mm	5.4 ns
MT48LC4M16A2B4-6AIT:J	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	1	S-PBGA-B54	3.6 V	1 mm	167 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	8 mm	5.4 ns
MT48LC4M16A2B4-7E:J	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		BOTTOM	1	S-PBGA-B54	3.6 V	1 mm	143 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	8 mm	5.4 ns
MT46H256M32L4JV-5WT:B	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	268435456 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm	200 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H128M16LFB7-6IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B60	1.95 V	1 mm		10 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	5 ns
MT42L384M32D3LP-18WT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		402653184 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			384MX32	384M			BOTTOM	1	S-PBGA-B216	1.95 V	.82 mm		12 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L384M32D3LP-25WT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		402653184 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			384MX32	384M			BOTTOM	1	S-PBGA-B216	1.95 V	.82 mm		12 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT46H128M16LFDD-48AIT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	90 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.95 V	1 mm	208 MHz	8 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16	9 mm	4.8 ns
MT48LC4M32B2B5-6AIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	180 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3.6 V	1 mm	166 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e1	30	260	.0025 Amp	1,2,4,8	13 mm	5.4 ns
MT48LC8M16A2B4-6AAAT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		8MX16	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3.6 V	1 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e1					8 mm	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.