SQUARE DRAM 241

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
IS42S16800F-7BL-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		100 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel		BOTTOM		S-PBGA-B54			143 MHz		Not Qualified	134217728 bit						.002 Amp	1,2,4,8		5.4 ns
IS42S83200G-7BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	33554432 words	1,2,4,8,FP		COMMON	3.3	3.3	8	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		BOTTOM		S-PBGA-B54			143 MHz		Not Qualified	268435456 bit						.004 Amp	1,2,4,8		5.4 ns
MT42L64M32D1LF-18IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA		4,8,16		COMMON		1.2,1.8		GRID ARRAY, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE			-40 Cel		BOTTOM		S-PBGA-B168			533 MHz		Not Qualified	2147483648 bit						.000025 Amp	4,8,16		5.5 ns
MT46H128M32L2KQ-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm	208 MHz	12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H128M32L2MC-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	240	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA240,27X27,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B240	1.95 V	.8 mm	208 MHz	14 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	14 mm	5 ns
MT46H256M32L4JV-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	268435456 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm	208 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H256M32L4JV-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	268435456 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm	166 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H64M32LFMA-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.7 mm		12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H64M32LFMA-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.7 mm	166 MHz	12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	2,4,8,16	12 mm	5 ns
MT42L128M64D4KJ-25IT:A	Micron Technology	LPDDR2 DRAM	OTHER	216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel		64MX32	64M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B216	1.95 V	1 mm		12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12 mm	5.5 ns
MT42L128M64D4LC-3IT:A	Micron Technology	LPDDR2 DRAM	OTHER	240	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX64	128M	-25 Cel		BOTTOM	1	S-PBGA-B240	1.9 V	1 mm		14 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH						14 mm
MT42L64M64D2MC-3IT:A	Micron Technology	LPDDR2 DRAM	OTHER	240	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX64	64M	-25 Cel		BOTTOM	1	S-PBGA-B240	1.9 V	.8 mm		14 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH						14 mm
MT48LC16M16A2F4-6A:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54	3.6 V	1 mm	167 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e1	30	260	.0025 Amp	1,2,4,8	8 mm	5.4 ns
MT42L64M32D1KL-3IT:A	Micron Technology	LPDDR2 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		2147483648 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			12 mm	5.5 ns
W9864G6JT-6I	Winbond Electronics	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	75 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	1	S-PBGA-B54	3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	8 mm	5 ns
MT44K16M36RB-093:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT44K16M36RB-093E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT44K16M36RB-093EIT:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K16M36RB-107E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K16M36RB-125:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K16M36RB-125E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-093:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT44K32M18RB-093E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT44K32M18RB-093EIT:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-093IT:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-107:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-107E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT44K32M18RB-125:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-125E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K32M18RB-125EIT:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT46H128M16LFB7-5WT:B	Micron Technology	DDR1 DRAM	OTHER	60	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-20 Cel		BOTTOM	1	S-PBGA-B60	1.95 V	1 mm	200 MHz	10 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16	10 mm	5 ns
MT46H128M16LFB7-6WT:B	Micron Technology	DDR1 DRAM	OTHER	60	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-20 Cel		BOTTOM	1	S-PBGA-B60	1.95 V	1 mm	166 MHz	10 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16	10 mm	5 ns
MT46H128M32L2KQ-5WT:B	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-20 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm	200 MHz	12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H128M32L2KQ-6WT:B	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-20 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm	166 MHz	12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H128M32L2MC-6WT:B	Micron Technology	DDR1 DRAM	OTHER	240	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA240,27X27,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-20 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B240	1.95 V	.8 mm	166 MHz	14 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	14 mm	5 ns
MT46H32M32LFMA-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	32MX32	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	.8 mm	200 MHz	14 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	14 mm	5 ns
MT46H64M32LFMA-5WT:B	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	64MX32	64M	-20 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	.7 mm	200 MHz	12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	12 mm	5 ns
W9825G6JB-6I	Winbond Electronics	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel		BOTTOM	1	S-PBGA-B54	3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	8 mm	5 ns
W9825G6JB-6	Winbond Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM	1	S-PBGA-B54	3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	8 mm	5 ns
IS42S16800F-7BL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel		BOTTOM	1	S-PBGA-B54	3.6 V	1.2 mm	143 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				.002 Amp	1,2,4,8	8 mm	5.4 ns
MT42L128M32D2KL-25IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B168	1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L128M32D2KL-3IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B168	1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L128M64D4KJ-3IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX64	128M			BOTTOM	1	S-PBGA-B216	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L128M64D4LD-25IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B220	1.95 V	1 mm		14 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT42L128M64D4LD-3IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B220	1.95 V	1 mm		14 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT42L192M32D3LE-3IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		201326592 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			192MX32	192M			BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L256M32D4KP-25IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L256M32D4KP-3IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.