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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
AS4C4M16SA-6TINTR	Alliance Memory	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		4MX16	4M	-40 Cel	Tin (Sn)	BOTTOM	1	S-PBGA-B54	3	3.6 V	1.2 mm		8 mm	67108864 bit	3 V	AUTO/SELF REFRESH	e3					8 mm	5.4 ns
MT44K32M36RB-107EIT:A	Micron Technology	DDR DRAM	INDUSTRIAL	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		32MX36	32M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36RB-093EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		16MX36	16M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36RB-093F:B	Micron Technology	DDR DRAM	OTHER	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K16M36RB-107E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		16MX36	16M	0 Cel		BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36RB-107EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		16MX36	16M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-093E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-093F:B	Micron Technology	DDR DRAM	OTHER	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-107E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36RB-093E:BTR	Micron Technology	DDR3 DRAM	OTHER	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4	YES	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	100 Cel	3-STATE	16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm	1075 MHz	13.5 mm	603979776 bit	1.28 V		e1			.225 Amp	2,4	13.5 mm
MT44K16M36RB-093EIT:BTR	Micron Technology	DDR3 DRAM	INDUSTRIAL	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4	YES	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	100 Cel	3-STATE	16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm	1075 MHz	13.5 mm	603979776 bit	1.28 V		e1	30	260	.225 Amp	2,4	13.5 mm
MT44K16M36RB-093F:BTR	Micron Technology	RLDRAM3		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.45 V	1.2 mm	1075.2 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K16M36RB-107E:BTR	Micron Technology	RLDRAM3		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2665 mA	16777216 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.45 V	1.2 mm	934.5 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-093E:BTR	Micron Technology	RLDRAM3		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2620 mA	33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.45 V	1.2 mm	1075.2 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-107E:BTR	Micron Technology	RLDRAM3		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2565 mA	33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.45 V	1.2 mm	934.5 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-107EIT:BTR	Micron Technology	RLDRAM3		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2565 mA	33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX18	32M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.45 V	1.2 mm	934.5 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH				.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-125E:ATR	Micron Technology	RLDRAM3		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168		1.45 V	1.2 mm	800 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4,8	13.5 mm
MT44K32M36RB-093E:ATR	Micron Technology	RLDRAM3		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1140 mA	33554432 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX36	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.45 V	1.2 mm	1075.2 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-107E:ATR	Micron Technology	RLDRAM3		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1070 mA	33554432 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX36	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.45 V	1.2 mm	934.5 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-107EIT:ATR	Micron Technology	RLDRAM3		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1070 mA	33554432 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX36	32M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.45 V	1.2 mm	934.5 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH				.225 Amp	2,4,8	13.5 mm
MT46H128M32L2KQ-48IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	4.8 ns
MT46H128M32L2KQ-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	VFBGA	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		128MX32	128M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	4.8 ns
MT46H64M32LFKQ-5IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		64MX32	64M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm	2147483648 bit	1.7 V	AUTO/SELF REFRESH						12 mm	5 ns
IS42SM16200D-6BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3	3.6 V	1.2 mm		8 mm	33554432 bit	2.7 V	AUTO/SELF REFRESH	e1					8 mm	5.5 ns
IS42VM16200D-6BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3	1.95 V	1.2 mm		8 mm	33554432 bit	1.7 V	AUTO/SELF REFRESH	e1					8 mm	5.5 ns
IS42VM16200D-75BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3	1.95 V	1.2 mm		8 mm	33554432 bit	1.7 V	AUTO/SELF REFRESH	e1					8 mm	6 ns
MT46H256M32L4LE-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	VFBGA	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		256MX32	256M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT44K32M36RB-083F:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm			32MX36	32M			BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M36RB-093E:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm			32MX36	32M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K32M36RB-093F:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm			32MX36	32M			BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M36RB-107E:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm			32MX36	32M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K64M18RB-083F:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm			64MX18	64M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K64M18RB-093E:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm			64MX18	64M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K64M18RB-093F:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm			64MX18	64M			BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K64M18RB-107E:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm			64MX18	64M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
EDB5432BEPA-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm			16MX32	16M			BOTTOM	1	S-PBGA-B168		1.3 V	.8 mm		12 mm	536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB5432BEPA-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		16MX32	16M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.3 V	.8 mm		12 mm	536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
EDB5432BEPA-1DIT-F-R	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		16MX32	16M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.3 V	.8 mm		12 mm	536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
EDF8164A3PK-JD-F-D	Micron Technology	LPDDR3 DRAM		216	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm			128MX64	128M			BOTTOM	1	S-PBGA-B216		1.3 V	.7 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
EDF8164A3PK-JD-F-R	Micron Technology	LPDDR3 DRAM		216	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm			128MX64	128M			BOTTOM	1	S-PBGA-B216		1.3 V	.7 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
EDFA164A2PK-GD-F-D	Micron Technology	LPDDR3 DRAM		216	VFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm			256MX64	256M			BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm		12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
EDFA164A2PK-JD-F-D	Micron Technology	LPDDR3 DRAM		216	VFBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm			256MX64	256M			BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm		12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
MT48LC16M16A2B4-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	70 Cel		16MX16	16M	0 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm	268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			8 mm	5.4 ns
EDB8164B4PK-1D-F-D	Micron Technology	LPDDR2 DRAM		220	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B220		1.3 V	.7 mm		14 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			14 mm
EDB8164B4PR-1D-F-D	Micron Technology	LPDDR2 DRAM		216	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm			128MX64	128M			BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
EDB8164B4PT-1D-F-D	Micron Technology	LPDDR2 DRAM		216	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm			128MX64	128M			BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
EDB8164B4PT-1DAT-F-D	Micron Technology	LPDDR2 DRAM		216	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm			128MX64	128M			BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB8164B4PT-1DAT-F-R	Micron Technology	LPDDR2 DRAM		216	VFBGA	SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm			128MX64	128M			BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.