8192 DRAM 707

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT48LC16M16A2TG-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT41K256M4DA-107:J	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	162 mA	268435456 words	8	YES	COMMON	1.35	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	933 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH					8	10.5 mm	.195 ns
MT46H128M16LFDD-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	90 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-25 Cel		BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	208 MHz	8 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		30	260	.00001 Amp	2,4,8,16	9 mm	4.8 ns
MT46H256M32L4SA-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		90 mA	268435456 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-25 Cel		BOTTOM		S-PBGA-B168				208 MHz		Not Qualified	8589934592 bit				30	260	.00001 Amp	2,4,8,16		5 ns
MT46H16M32LFB5-6IT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	105 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	13 mm	5 ns
MT46H32M16LFBF-6IT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	9 mm	5 ns
MT48H16M32LFB5-75IT:C	Micron Technology	DDR DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	16777216 words	1,2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	133 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	1,2,4,8	13 mm	5.4 ns
MT48H32M16LFB4-75IT:C	Micron Technology	DDR DRAM	INDUSTRIAL	54	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	90 mA	33554432 words	1,2,4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54		1.95 V	1 mm	133 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	1,2,4,8	8 mm	5.4 ns
MT46V32M8P-5BIT:K	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e3			.004 Amp	2,4,8	22.22 mm	.7 ns
MT41J128M8JP-125:G	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	600 mA	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	1	R-PBGA-B78	3	1.575 V	1.2 mm	800 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260		8	11.5 mm	.1 ns
MT41J128M8JP-15E:G	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	490 mA	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.125 ns
MT41J128M8JP-15EIT:G	Micron Technology	DDR3 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	490 mA	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.125 ns
MT41J256M4JP-125:G	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	400 mA	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	800 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.1 ns
MT41J256M4JP-15E:G	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	315 mA	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.125 ns
MT41J64M16JT-125:G	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	800 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			.012 Amp	8	14 mm	.1 ns
MT41J64M16JT-15E:G	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	265 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.125 ns
MT41J64M16JT-15EIT:G	Micron Technology	DDR3 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	265 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.125 ns
MT41J64M16JT-187E:G	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	533 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			.012 Amp	8	14 mm	.15 ns
MT18HTF25672PDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1728 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm	333 MHz	4 mm	Not Qualified	19327352832 bit	1.7 V	SELF CONTAINED REFRESH; WD-MAX	e4			.126 Amp		133.35 mm	.45 ns
MT4HTF6464HZ-667H1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1400 mA	67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	333 MHz	2.45 mm	Not Qualified	4294967296 bit	1.7 V	WD-MAX	e3			.028 Amp		67.6 mm
MT4JSF12864HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1700 mA	134217728 words			COMMON	1.35	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm	667 MHz	2.45 mm	Not Qualified	8589934592 bit	1.283 V	WD-MAX		NOT SPECIFIED	NOT SPECIFIED	.048 Amp		67.6 mm	.255 ns
MT4JTF12864AZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1780 mA	134217728 words			COMMON	1.5	1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm	667 MHz	2.7 mm	Not Qualified	8589934592 bit	1.425 V	WD-MAX	e4			.048 Amp		133.35 mm
MT16HTF12864AY-667D4	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1976 mA	134217728 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N240				333 MHz		Not Qualified	8589934592 bit						.112 Amp			.45 ns
MT4HTF3264HY-667D3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	2147483648 bit						.028 Amp			.45 ns
MT46H64M16LFBF-6IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	120 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	9 mm	5 ns
MT4VDDT1664HY-335F3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	16777216 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	1073741824 bit									.7 ns
MT8VDDT6464HDY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1640 mA	67108864 words		YES	COMMON	2.5	2.5	8	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.61 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V	31.9 mm	167 MHz	3.8 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4			.04 Amp		67.6 mm	.7 ns
MT8VDDT6464HY-335F3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3240 mA	67108864 words		YES	COMMON	2.5	2.5	8	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.6 V	31.9 mm	167 MHz	3.8 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4			.04 Amp		67.6 mm	.7 ns
MT9VDDF6472Y-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3645 mA	67108864 words		YES	COMMON	2.5	2.5	8	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V	28.73 mm	167 MHz	3.175 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4			.045 Amp		133.35 mm	.7 ns
MT46H16M32LFCX-5:B	Micron Technology	DDR1 DRAM	COMMERCIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	125 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	200 MHz	9 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	2,4,8,16	13 mm	5 ns
MT46H16M32LFCX-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	125 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	200 MHz	9 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16	13 mm	5 ns
MT46H16M32LFCX-6:B	Micron Technology	DDR1 DRAM	COMMERCIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	9 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	2,4,8,16	13 mm	6 ns
MT46H16M32LFCX-6IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	9 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16	13 mm	6 ns
MT46H64M32L2JG-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	64MX32	64M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.95 V	.9 mm	200 MHz	12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH					2,4,8,16	12 mm	5 ns
MT46H64M32L2JG-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	64MX32	64M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.95 V	.9 mm	166 MHz	12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		30	260		2,4,8,16	12 mm	6 ns
MT47H32M16HR-3:F	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.007 Amp	4,8	12.5 mm	.45 ns
MT4VDDT3264HY-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	33554432 words		YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V	31.9 mm	200 MHz	2.45 mm	Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH; WD-MAX	e4					67.6 mm	.7 ns
MT9VDDT6472AY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4050 mA	67108864 words		YES	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V	31.75 mm	200 MHz	3.18 mm	Not Qualified	4831838208 bit	2.5 V	AUTO/SELF REFRESH	e4			.045 Amp		133.35 mm	.7 ns
MT46H16M16LFBF-5:H	Micron Technology	LPDDR1 DRAM	COMMERCIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	200 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.0003 Amp	2,4,8,16	9 mm	5 ns
MT46H16M16LFBF-5IT:H	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	200 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	9 mm	5 ns
MT46H16M16LFBF-6:H	Micron Technology	LPDDR1 DRAM	COMMERCIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	90 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	9 mm	5 ns
MT46H16M16LFBF-6IT:H	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	90 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	9 mm	5 ns
MT46H16M32LFCG-6IT:B	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	152	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	DRAMs	.65 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel		BOTTOM	1	S-PBGA-B152		1.95 V	1 mm	166 MHz	14 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH					2,4,8	14 mm	5 ns
MT46H32M32LFCG-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	152	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	DRAMs	.65 mm	85 Cel	3-STATE	32MX32	32M	-40 Cel		BOTTOM	1	S-PBGA-B152		1.95 V	1 mm	166 MHz	14 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH					2,4,8	14 mm	5 ns
MT46H64M32L2CG-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	152	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	DRAMs	.65 mm	85 Cel	3-STATE	64MX32	64M	-40 Cel		BOTTOM	1	S-PBGA-B152		1.95 V	1 mm	166 MHz	14 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH					2,4,8	14 mm	5 ns
MT48H8M32LFB5-10	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.9 V	1 mm	104 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.003 Amp	1,2,4,8	13 mm	7 ns
MT48H8M32LFB5-10IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.9 V	1 mm	104 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.003 Amp	1,2,4,8	13 mm	7 ns
MT46V128M8P-75:A	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	485 mA	134217728 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	128MX8	128M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e3			.01 Amp	2,4,8	22.22 mm	.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.