Micron Technology DRAM 1,751

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MTA18ASF2G72HZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1881 mA	2147483648 words	4,8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel	3-STATE	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N260		1.26 V	30.15 mm	1333 MHz	3.7 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.45 Amp	4,8	69.6 mm
MTA8ATF2G64HZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1480 mA	2147483648 words		YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM260,20	.5 mm	95 Cel		2GX64	2G	0 Cel		DUAL	1	R-XDMA-N260			30.15 mm	1600 MHz	3.7 mm	137438953472 bit		AUTO/SELF REFRESH; WD-MAX				.304 Amp		69.6 mm
MT53D512M32D2DS-053AUT:D	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE								1	CMOS					536870912 words				1.1	32				125 Cel		512MX32	512M	-40 Cel			1					1866 MHz		17179869184 bit
MTA36ASF4G72PZ-2G6B2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3996 mA	4294967296 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1333 MHz	3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.792 Amp	8	133.35 mm
MTA9ASF1G72PZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1665 mA	1073741824 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1466 MHz	3.9 mm	77309411328 bit	1.14 V					.198 Amp	8	133.35 mm
MTA18ASF2G72PZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3870 mA	2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1466 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.396 Amp	8	133.35 mm
MTA36ASF4G72PZ-3G2E7	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	4536 mA	4294967296 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1612 MHz	3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.792 Amp	8	133.35 mm
MTA8ATF1G64AZ-2G3A1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1204 MHz	2.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA8ATF1G64AZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1333 MHz	2.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA8ATF1G64AZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1612 MHz	2.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA18ASF2G72PDZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1333 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA18ASF2G72PDZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1466 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA18ASF2G72PZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	4140 mA	2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.396 Amp	8	133.35 mm
MTA18ASF2G72PDZ-2G3D1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1204 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA36ASF4G72PZ-2G3D1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1204 MHz	3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA36ASF4G72PZ-2G9E2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	4266 mA	4294967296 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1466 MHz	3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.792 Amp	8	133.35 mm
MT40A512M16LY-062EAIT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	270 mA	536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH				.018 Amp	8	13.5 mm
MTA18ADF2G72AZ-3G2R1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1737 mA	2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm	1612.9 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.54 Amp	8	133.35 mm
MT53E384M32D2DS-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel	3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DT-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel	3-STATE	768MX32	768M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DE-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel	3-STATE	768MX32	768M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.14 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DT-053AUT:E	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	125 Cel	3-STATE	768MX32	768M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2DS-053AUT:E	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	125 Cel	3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2FW-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel	3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DE-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel	3-STATE	768MX32	768M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.14 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2DS-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel	3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2DS-046AUT:E	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	125 Cel	3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2FW-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel	3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DT-046AUT:E	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	125 Cel	3-STATE	768MX32	768M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT46H32M32LFT68MWC2	Micron Technology	LPDDR1 DRAM			DIE		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words	2,4,8,16	YES	COMMON	1.8	32	UNCASED CHIP			85 Cel	3-STATE	32MX32	32M	-40 Cel		UPPER	1	R-XUUC-N		1.95 V		166 MHz		1073741824 bit	1.7 V	AUTO/SELF REFRESH					2,4,8,16
MT48LC16M16A2P-6AXIT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	100 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	268435456 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT62F512M64D4BG-031WT:B	Micron Technology	LPDDR5 DRAM	OTHER							YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words				1.05	32				85 Cel		512MX64	512M	-25 Cel		BOTTOM	1					3200 MHz		34359738368 bit
MT40A512M16LY-062EIT:ETR	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		512MX16	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MT62F1G64D8CH-031WT:B	Micron Technology	LPDDR5 DRAM									1	CMOS					1073741824 words					64				85 Cel		1GX64	1G	-25 Cel			1							68719476736 bit
MT62F1G64D8CH-031WT:A	Micron Technology	LPDDR5 DRAM									1	CMOS					1073741824 words					64				85 Cel		1GX64	1G	-25 Cel			1							68719476736 bit
MT53D1024M32D4NQ-062WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8	32				85 Cel		1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.95 mm	1600 MHz	10 mm	34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D1024M32D4DT-053WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel		1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.95 mm	1869.1 MHz	10 mm	34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53D1024M32D4NQ-046WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8	32				85 Cel		1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D1024M32D4NQ-053WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8	32				85 Cel		1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.95 mm	1869.1 MHz	10 mm	34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D512M32D2DS-046WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel		512MX32	512M	-25 Cel		BOTTOM	1			1.95 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2NP-053WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8	32				85 Cel		512MX32	512M	-25 Cel		BOTTOM	1			1.95 V	.8 mm	1869.1 MHz	10 mm	17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D512M32D2NP-062WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8	32				85 Cel		512MX32	512M	-25 Cel		BOTTOM	1			1.95 V	.8 mm	1600 MHz	10 mm	17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D512M32D2NP-046WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8	32				85 Cel		512MX32	512M	-25 Cel		BOTTOM	1			1.95 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT48LC8M16A2P-6AXIT:L	Micron Technology	SYNCHRONOUS DRAM		54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS	100 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	.8 mm	85 Cel		8MX16	8M	-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH		30	260	.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT53B1024M32D4NQ-053WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel		1GX32	1G	-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
MT53B256M32D1NP-062WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel		256MX32	256M	-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		30	260		16,32	14.5 mm
MT53B512M32D2NP-053WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel		512MX32	512M	-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
MT53B256M32D1NP-053WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel		256MX32	256M	-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.