Micron Technology DRAM 1,751

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MTA8ATF2G64AZ-3G2F1	Micron Technology	DDR4 DRAM MODULE	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1336 mA	2147483648 words		YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY				95 Cel			2GX64	2G	0 Cel		DUAL	1	R-XDMA-N288		31.25 mm	1600 MHz		137438953472 bit		AUTO/SELF REFRESH				.304 Amp		133.35 mm
MTA18ASF4G72AZ-3G2F1	Micron Technology	DDR4 DRAM MODULE	288				UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES			72					95 Cel			4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288			1600 MHz		309237645312 bit		AUTO/SELF REFRESH
MT40A1G16KH-062EAUT:E	Micron Technology	DDR4 DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	299 mA	1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	125 Cel			1GX16	1G	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	13 mm
MT40A2G8JE-062EAUT:E	Micron Technology	DDR4 DRAM	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	162 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	125 Cel			2GX8	2G	-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		30	260	.043 Amp	8	11 mm
MT40A1G16KH-062EAIT:E	Micron Technology	DDR4 DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	299 mA	1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			1GX16	1G	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	13 mm
MT40A2G8JE-062EAAT:E	Micron Technology	DDR4 DRAM	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	162 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	105 Cel			2GX8	2G	-40 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	11 mm
MT48LC4M32B2B5-6A:LTR	Micron Technology	SYNCHRONOUS DRAM	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	180 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32		.8 mm	70 Cel		3-STATE	4MX32	4M	0 Cel		BOTTOM	1	R-PBGA-B90	3.6 V	1 mm	167 MHz	8 mm	134217728 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	13 mm	5.4 ns
MTA18ADF4G72PZ-3G2F1	Micron Technology	DDR4 DRAM MODULE	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1845 mA	4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288			1600 MHz		309237645312 bit		AUTO/SELF REFRESH				.756 Amp
MT40A512M16TB-062E:R	Micron Technology	DDR4 DRAM	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	NO		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH		30	260		8	13 mm
MT41K2G4RKB-107:P	Micron Technology	DDR3L DRAM	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	163 mA	2147483648 words	8	YES	COMMON	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		3-STATE	2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm	933 MHz	8 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH		30	260	.022 Amp	8	10.5 mm
MTA18ASF4G72HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1845 mA	4294967296 words		YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			4GX72	4G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		30.15 mm	1612.9 MHz	3.7 mm	309237645312 bit		AUTO/SELF REFRESH; WD-MAX				.684 Amp		69.6 mm
MTC4C10163S1SC48BA1	Micron Technology	DDR5 DRAM MODULE	262	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	778 mA	1073741824 words		YES		1.1	64	MICROELECTRONIC ASSEMBLY				95 Cel			1GX64	1G	0 Cel		DUAL	1	R-XDMA-N262			2403.8 MHz		68719476736 bit		SELF REFRESH				.065 Amp
MTC16C2085S1UC48BA1	Micron Technology	DDR5 DRAM MODULE	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	993 mA	4294967296 words		YES		1.1	64	MICROELECTRONIC ASSEMBLY				95 Cel			4GX64	4G	0 Cel		DUAL	1	R-XDMA-N288			2403.8 MHz		274877906944 bit		SELF REFRESH				.086 Amp
MT53D1024M32D4DT-046AIT:D	Micron Technology	LPDDR4 DRAM	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			1GX32	1G	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2DS-046AUT:D	Micron Technology	LPDDR4 DRAM	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2DS-046AIT:D	Micron Technology	LPDDR4 DRAM	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D1024M32D4DT-046AUT:D	Micron Technology	LPDDR4 DRAM	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel			1GX32	1G	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2DS-046AAT:D	Micron Technology	LPDDR4 DRAM	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M16D1FW-046AIT:D	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M16D1FW-046AAT:D	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel			512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M32D2FW-046AUT:D	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M32D2FW-046AIT:D	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT61M256M32JE-10AAT:A	Micron Technology	GDDR6 DRAM	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16	.75 mm	105 Cel		3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B180	1.2875 V	1.2 mm	1500 MHz	12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH						14 mm
MT61M256M32JE-12AAT:A	Micron Technology	GDDR6 DRAM	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16	.75 mm	105 Cel		3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B180	1.2875 V	1.2 mm	1500 MHz	12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH						14 mm
MT60B1G16HC-48B:A	Micron Technology	DDR5 DRAM	102	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.1	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA102,9X17,32		.8 mm	95 Cel		3-STATE	1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B102		1 mm	2403.8 MHz	9 mm	17179869184 bit		SELF REFRESH						14 mm
MT40A4G4SA-062E:F	Micron Technology	DDR4 DRAM	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words	8	YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel			4GX4	4G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A1G16KD-062EIT:ETR	Micron Technology	DDR4 DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			1GX16	1G	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13 mm
MT40A1G16KD-062EIT:E	Micron Technology	DDR4 DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			1GX16	1G	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13 mm
MT40A2G8SA-062E:F	Micron Technology	DDR4 DRAM	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel			2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT53E512M64D2HJ-046WT:B	Micron Technology	LPDDR4 DRAM	556	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA556,29X29,16		.4 mm	85 Cel			512MX64	512M	-25 Cel		BOTTOM	1	S-PBGA-B556	1.17 V	1.1 mm	2136.7 MHz	12.4 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	12.4 mm
MT53E128M16D1DS-046WT:A	Micron Technology	LPDDR4 DRAM	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	85 Cel			128MX16	128M	-25 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm	2147483648 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E128M32D2FW-046IT:A	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			128MX32	128M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E128M32D2FW-046WT:A	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	85 Cel			128MX32	128M	-25 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	4294967296 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT40A512M16TB-062E:J	Micron Technology	DDR4 DRAM	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	NO		512MX16	512M	0 Cel		BOTTOM		R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	13.5 mm
MT40A1G8SA-062E:J	Micron Technology	DDR4 DRAM	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A2G4SA-062E:J	Micron Technology	DDR4 DRAM	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A2G4SA-062E:R	Micron Technology	DDR4 DRAM	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT47H32M8BP-3:BTR	Micron Technology	DDR2 DRAM	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	250 mA	33554432 words	4,8	YES	COMMON	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel			32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	333 MHz	8 mm	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.04 Amp	4,8	12 mm	.45 ns
MT53B512M32D2NP-062AAT:C	Micron Technology	LPDDR4 DRAM	200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	410 mA	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0033 Amp	16,32	14.5 mm
MT53B512M32D2NP-062AIT:C	Micron Technology	LPDDR4 DRAM	200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	400 mA	536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0025 Amp	16,32	14.5 mm
MT53B256M32D1DS-062AIT:C	Micron Technology	LPDDR4 DRAM	200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	400 mA	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0025 Amp	16,32	14.5 mm
MT53B256M32D1NP-062AAT:C	Micron Technology	LPDDR4 DRAM	200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	410 mA	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel			256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0033 Amp	16,32	14.5 mm
MT53B256M32D1NP-062AIT:C	Micron Technology	LPDDR4 DRAM	200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	400 mA	268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0025 Amp	16,32	14.5 mm
MT47H64M16NF-25EAAT:MTR	Micron Technology	DDR2 DRAM	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	260 mA	67108864 words	4,8	YES	COMMON	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	105 Cel			64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	400 MHz	8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.01 Amp	4,8	12.5 mm	.4 ns
MT53E1G32D2FW-046AUT:B	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	125 Cel			1GX32	1G	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT9KBF51272AKZ-1G4E2	Micron Technology	DDR3L DRAM MODULE	244	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.35	72	MICROELECTRONIC ASSEMBLY		8		70 Cel		OPEN-DRAIN	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N244	1.45 V	17.91 mm	666.66 MHz	3.8 mm	38654705664 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					8	82 mm
MT53E256M32D2FW-046AAT:B	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm	8589934592 bit	1.06 V						16,32	14.5 mm
MTA16ATF4G64HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES			64	MICROELECTRONIC ASSEMBLY	DIMM260,20		.5 mm	95 Cel			4GX64	4G	0 Cel		DUAL	1	R-XDMA-N260		30.15 mm		3.7 mm	274877906944 bit		AUTO REFRESH AND SELF REFRESH; WIDTH MAX						69.6 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.