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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length
MTA18ASF2G72HZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA18ASF2G72PDZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72PZ-2G6D1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3600 mA	2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1333 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.45 Amp	8	133.35 mm
MTA36ASF4G72LZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT40A1G8WE-075EAIT:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	182 mA	1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel	3-STATE	1GX8	1G	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	12 mm
EDB4432BBBJ-1D-F-R	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			128MX32	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1					11.5 mm
MT44K16M36RB-093E:B	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.35	36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO/SELF REFRESH	e1					13.5 mm
EDB1316BDBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1					11.5 mm
EDB1332BDBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		32MX32	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
EDB1332BDBH-1DIT-F-RTR	Micron Technology	LPDDR2 DRAM																														Tin/Silver/Copper (Sn/Ag/Cu)				3								e1	30	260
EDB2432B4MA-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
EDB4416BBBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB4416BBBH-1DIT-F-RTR	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB4416BBBH-1DIT-F-R	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB4432BBBJ-1D-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			128MX32	128M			BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB1316BDBH-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			64MX16	64M			BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB1316BDBH-1DAAT-F-RTR	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V	SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB1316BDBH-1DAUT-F-D	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	125 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB1316BDBH-1DAUT-F-RTR	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words				1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	125 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB1332BDBH-1DAUT-F-D	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	125 Cel		32MX32	32M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB1332BDBH-1DAUT-F-RTR	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words				1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	125 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB2432B4MA-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			64MX32	64M			BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB2432B4MA-1DAAT-F-RTR	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	105 Cel		32MX32	32M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V	SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB2432B4MA-1DAUT-F-D	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	125 Cel		64MX32	64M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB2432B4MA-1DAUT-F-RTR	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	125 Cel		32MX32	32M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			11.5 mm
MTA18ASF2G72PKTZ-2G6B1	Micron Technology	DDR4 DRAM MODULE	INDUSTRIAL	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			.5 mm	85 Cel		2GX72	2G	-40 Cel		DUAL	1	R-XDMA-N288		1.26 V	30.15 mm		4 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						80 mm
MTA72ASS8G72LZ-2G6B2	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		8GX72	8G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA9ASF1G72PZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
EDW4032BABG-60-F-D	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35	32	GRID ARRAY, THIN PROFILE, FINE PITCH		16	.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm	4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY						14 mm
EDW4032BABG-70-F-D	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35	32	GRID ARRAY, THIN PROFILE, FINE PITCH		16	.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm	4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY						14 mm
EDW4032BABG-80-F-D	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35	32	GRID ARRAY, THIN PROFILE, FINE PITCH		16	.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm	4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY						14 mm
MTA18ASF2G72PF1Z-2G6V21AB	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		5.8 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA9ADF1G72AZ-2G6B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		2.7 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT40A1G8WE-075E:D	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH						12 mm
MT40A2G4WE-075E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	58 mA	2147483648 words	8	YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333.33 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH				.041 Amp	8	12 mm
MT40A512M16JY-075E:B	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	105 mA	536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel		512MX16	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333.33 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.05 Amp	8	14 mm
MT18KSF1G72AZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35	72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm	77309411328 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX						133.35 mm
MTA9ASF51272PZ-2G1A2	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA16ATF1G64AZ-2G6B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY				85 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT40A1G16WBU-075E:B	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		8 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
EDF8132A3MA-GD-F-D	Micron Technology	LPDDR3 DRAM		178	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			256MX32	256M			BOTTOM	1	R-PBGA-B178		1.3 V	.85 mm		10.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; IT ALSO HAVE 0.65 MM PITCH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDFA232A2MA-GD-F-D	Micron Technology	LPDDR3 DRAM		178	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			512MX32	512M			BOTTOM	1	R-PBGA-B178		1.3 V	1 mm		10.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; IT ALSO HAVE 0.65 MM PITCH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDFA232A2MA-JD-F-D	Micron Technology	LPDDR3 DRAM		178	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			512MX32	512M			BOTTOM	1	R-PBGA-B178		1.3 V	1 mm		10.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; IT ALSO HAVE 0.65 MM PITCH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
MT40A1G8WE-075EIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G	-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH						12 mm
MTA144ASQ16G72PSZ-2S6G1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		17179869184 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel		16GX72	16G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	1236950581248 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF2G72PZ-2G1A2	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF2G72PZ-2G1B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF2G72PZ-2G3A3	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.