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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MTA36ASF2G72PZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA72ASS8G72PSZ-2S6G1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			8GX72	8G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT40A256M16GE-083EAAT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	71 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel		3-STATE	256MX16	256M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.059 Amp	8	14 mm
MT40A256M16GE-083EAIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	69 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	256MX16	256M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.057 Amp	8	14 mm
MT40A256M16GE-083EAUT:B	Micron Technology	DDR4 DRAM	AUTOMOTIVE	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	76 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	125 Cel		3-STATE	256MX16	256M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.062 Amp	8	14 mm
MT40A512M8RH-083EAAT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	58 mA	536870912 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	105 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.059 Amp	8	10.5 mm
MT40A512M8RH-083EAIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	56 mA	536870912 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.057 Amp	8	10.5 mm
MT40A512M8RH-083EAUT:B	Micron Technology	DDR4 DRAM	AUTOMOTIVE	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	63 mA	536870912 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	125 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200 MHz	9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.062 Amp	8	10.5 mm
AS4C1G8MD3L-12BCN	Alliance Memory	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						13.2 mm
MT8KTF25664HZ-1G6K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1248 mA	268435456 words		YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel		3-STATE	256MX64	256M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm	800 MHz	3.8 mm	Not Qualified	17179869184 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX				.096 Amp		67.6 mm
AS4C16M32MS-7BCN	Alliance Memory	SYNCHRONOUS DRAM	OTHER	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel			16MX32	16M		-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
MT18KSF1G72HZ-1G6E2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel			1GX72	1G		0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e4					67.6 mm
W989D6DBGX6E	Winbond Electronics	SYNCHRONOUS DRAM		54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				32MX16	32M				BOTTOM	1	R-PBGA-B54		1.95 V	1.025 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			9 mm	5 ns
MT41K512M16HA-125AIT:ATR	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT40A1G8WE-083EAAT:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	184 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	105 Cel		3-STATE	1GX8	1G		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.027 Amp	8	12 mm
MT40A4G4NRE-075E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words		YES		1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			4GX4	4G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm		17179869184 bit	1.14 V	SELF REFRESH						12 mm
MT40A512M16JY-075EAIT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	262 mA	536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	14 mm
MT40A512M16JY-083EAAT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	254 mA	536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel		3-STATE	512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.028 Amp	8	14 mm
MT40A512M16JY-083EAIT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	252 mA	536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	14 mm
AS4C256M16D3A-12BIN	Alliance Memory	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel			256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.575 V	1 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						13 mm
MT48LC16M16A2P-6AXIT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	100 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		.8 mm	85 Cel		3-STATE	16MX16	16M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT52L256M64D2GN-107WT:B	Micron Technology	LPDDR3 DRAM		256	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm				256MX64	256M			TIN SILVER COPPER	BOTTOM	1	S-PBGA-B256		1.3 V	.7 mm		14 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1					14 mm
MTA16ATF2G64AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY				85 Cel			2GX64	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA16ATF2G64HZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY				85 Cel			2GX64	2G		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA18ADF2G72AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72PDZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel		OPEN-DRAIN	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1600 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA18ASF2G72PZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA4ATF51264AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY				85 Cel			512MX64	512M		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		2.7 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA4ATF51264HZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words				1.2		64	MICROELECTRONIC ASSEMBLY				95 Cel			512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		2.5 mm		34359738368 bit	1.14 V	WD-MAX		NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MTA8ATF1G64HZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY				85 Cel			1GX64	1G		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MTA9ADF1G72PZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA9ASF1G72PKIZ-3G2E1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			1GX72	1G		-40 Cel		DUAL	1	R-XDMA-N288		1.26 V	30.15 mm		4 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						80 mm
MTA9ASF1G72PZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
EDB8132B4PM-1DAT-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm				256MX32	256M			Tin/Silver/Copper (Sn96.8Ag3.0Cu0.2)	BOTTOM	1	S-PBGA-B168		1.3 V	.82 mm		12 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		30	260			12 mm
AS4C64M16D2A-25BCN	Alliance Memory	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	20	265			12.5 mm
AS4C256M16D3B-12BIN	Alliance Memory	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT52L256M64D2LZ-107XT:B	Micron Technology	LPDDR3 DRAM	OTHER	216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	320 mA	268435456 words		YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16		.4 mm	105 Cel		3-STATE	256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm	933 MHz	12 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM				.012 Amp		12 mm
MT18KSF51272HZ-1G6K2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel			512MX72	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
EDF8164A3MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			128MX64	128M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.85 mm		11 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11 mm
EDFA164A2MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	1 mm		11 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11 mm
EDFA164A2MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	1 mm		11 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11 mm
EDFA364A3MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.85 mm		12.5 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			12.5 mm
EDFB164A1MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			512MX64	512M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.95 mm		12.5 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12.5 mm
EDFB164A1MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			512MX64	512M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.95 mm		12.5 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12.5 mm
EDFP164A3PD-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	256	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		402653184 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel			384MX64	384M		-30 Cel		BOTTOM	1	S-PBGA-B256		1.3 V	.8 mm		14 mm		25769803776 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT40A1G8SA-062E:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		1GX8	1G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT40A1G8SA-075:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	85 Cel	NO		1GX8	1G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1				8	11 mm
MT40A2G4SA-062E:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		2GX4	2G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.