DIP EEPROM 130

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24M01LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	131072 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V			e4			.000002 Amp	9.27 mm
24LC1026-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words		4.5			8	IN-LINE	DIP8,.3			200	2.54 mm	125 Cel			128KX8	128K	-40 Cel		MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3			.000005 Amp	9.271 mm		4.5
CAT24C512LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2.5 mA	65536 words		3.3		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel	NO		64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V			e4			.000002 Amp	9.27 mm
CAT24C02LI-GA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		1.8/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4			.000001 Amp	9.27 mm
BR24T256-W	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2.5 mA	32768 words				1.8/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8	1	5.5 V	4.21 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.6 V	SEATED HT-CALCULATED		e3			.000002 Amp	9.3 mm
CAT25010LI-GD	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			128X8	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4		260	.000002 Amp	9.27 mm
CAT25020LI-GD	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e4		260	.000002 Amp	9.27 mm
CAT25040LI-GD	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			512X8	512	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V			e4		260	.000002 Amp	9.27 mm
BR24G1M-3A	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	4.5 mA	131072 words				1.8/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			128KX8	128K	-40 Cel			1010DDMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	3.7 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V	ROHM-S-A0000225889 REF SEATED HTCONSIDER			NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	9.3 mm
24AA256UID-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words		4.5		1.8/5	8	IN-LINE	DIP8,.3		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.1MHZ		e3			.000001 Amp	9.271 mm		4.5
25AA1024-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words		5			8	IN-LINE	DIP8,.3			200	2.54 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	20 MHz	7.62 mm	Not Qualified	6 ms	SPI	8388608 bit	4.5 V	OPERTAES WITH 2.5VMIN @ 10MHZ		e3			.000012 Amp	9.271 mm		5
24LC65/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	8KX8	8K	0 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDIP-T8		6 V	4.32 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3			.000005 Amp	9.46 mm		5
AT28LV256-25PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3.3	YES	3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	Tin/Lead (Sn/Pb)			DUAL			R-PDIP-T28		3.465 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	3.135 V	AUTOMATIC WRITE	64	e0			.00002 Amp	36.95 mm	250 ns	3	YES
AT28LV256-25PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3.3	YES	3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	Tin/Lead (Sn/Pb)			DUAL			R-PDIP-T28		3.465 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	3.135 V	AUTOMATIC WRITE	64	e0			.00005 Amp	36.95 mm	250 ns	3	YES
24AA65/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words		5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	8KX8	8K	0 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDIP-T8		6 V	4.32 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			e3			.000005 Amp	9.46 mm		5
24C65/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	8KX8	8K	0 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDIP-T8		6 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	4.5 V			e3			.000005 Amp	9.46 mm		5
M24C16-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e0			.000001 Amp	9.27 mm
M24C16-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	4.5 V			e0			.000001 Amp	9.27 mm
M24C08-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		TIN LEAD	1010DMMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e0			.000001 Amp	9.27 mm
24AA044-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words		2.5			8	IN-LINE	DIP8,.3			200	1.27 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		MATTE TIN	1010DDMR		DUAL	1		R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	4096 bit	2.2 V	1.7V TO 1.8V @ 0.1MHz AND 1.8V TO 2.2V @ 0.4MHz		e3			.000001 Amp	9.271 mm		2.5
AT24C64-10PC	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		OPEN-DRAIN	8KX8	8K	0 Cel		TIN LEAD	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V	DATA RETENTION: 100 YEARS		e0			.000035 Amp	9.59 mm
EPC1064VPC8	Altera	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	64KX1	64K	0 Cel		TIN LEAD			DUAL			R-PDIP-T8	1	3.6 V	4.318 mm		6 MHz	7.62 mm	Not Qualified			65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES		e0		220		9.398 mm
AT28C256-15PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	10	2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	Tin/Lead (Sn/Pb)			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0	30	225	.0002 Amp	37.0205 mm	150 ns	5	YES
AT28C256-15PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	Tin/Lead (Sn/Pb)			DUAL			R-PDIP-T28		5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0	30	240	.0002 Amp	37.0205 mm	150 ns	5	YES
AT28C256F-15PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0002 Amp	37.0205 mm	150 ns	5	YES
AT28HC256-12PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.0205 mm	120 ns	5	YES
AT28HC256-70PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				37.0205 mm	70 ns	5	YES
AT28HC256E-12PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.0205 mm	120 ns	5	YES
AT25010-10PC	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	6 mA	128 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		3-STATE	128X8	128	0 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	4-WIRE SERIAL INTERFACE		e0			.0001 Amp	9.59 mm
24LC21/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	128X8	128	0 Cel		MATTE TIN	1010XXXR		DUAL	1		R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V			e3			.0001 Amp	9.46 mm		5
93LC66A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		2.5	YES	3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	512X8	512	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	1.8 V	1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS		e3			.000001 Amp	9.27 mm
XC17128ELPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	128KX1	128K	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC17128ELPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	128KX1	128K	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC17128EPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	128KX1	128K	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC17128EPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	128KX1	128K	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.5 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC17256ELPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	262144 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	256KX1	256K	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC17256ELPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	262144 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	256KX1	256K	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC17256EPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	256KX1	256K	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC17256EPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	256KX1	256K	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.5 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC1736EPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	36288X1	36288	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			36288 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC1765ELPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	64KX1	64K	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		2.5 MHz	7.62 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC1765ELPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	64KX1	64K	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		2.5 MHz	7.62 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC1765EPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	64KX1	64K	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC1765EPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	64KX1	64K	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
AT17LV256-10PC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	262144 words		3.3		3.3	1	IN-LINE	DIP8,.3		EEPROMs		2.54 mm	70 Cel		3-STATE	256KX1	256K	0 Cel		TIN LEAD			DUAL			R-PDIP-T8	1	3.6 V	5.334 mm		10 MHz	7.62 mm	Not Qualified			262144 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0			.00005 Amp	9.271 mm	75 ns
AT17C256-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words		5		5	1	IN-LINE	DIP8,.3		EEPROMs		2.54 mm	85 Cel		3-STATE	256KX1	256K	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		5.5 V	4.318 mm		12.5 MHz	7.62 mm	Not Qualified			262144 bit	4.5 V			e0			.00015 Amp	9.398 mm	55 ns
M24C32-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	4096 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel		TIN LEAD	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V			e0			.000002 Amp	9.27 mm
M93C46-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel		3-STATE	64X16	64	-40 Cel		Tin/Lead (Sn/Pb)			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e0			.000005 Amp	9.27 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.