DIP EEPROM 130

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M93C56-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel		3-STATE	128X16	128	-40 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e0			.00001 Amp	9.27 mm
M93C46-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel		3-STATE	64X16	64	-40 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e0			.00005 Amp	9.27 mm
M24C01-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		TIN LEAD	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e0			.000001 Amp	9.27 mm
M24C02-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e0			.000001 Amp	9.27 mm
M24C04-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		TIN LEAD	1010DDMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e0			.000001 Amp	9.27 mm
M93S56-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		3-STATE	128X16	128	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e0			.000005 Amp	9.27 mm
M93S66-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		3-STATE	256X16	256	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e0			.000005 Amp	9.27 mm
M24C04-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		TIN LEAD	1010DDMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	4096 bit	4.5 V			e0			.000001 Amp	9.27 mm
M95256-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			32KX8	32K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	100000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e0			.000001 Amp	9.27 mm
XC1701LPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	1MX1	1M	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC1701PD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	20 mA	1048576 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	1MX1	1M	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			1048576 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC1701PD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	20 mA	1048576 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.5 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			1048576 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC17512LPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	512KX1	512K	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC17512LPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	512KX1	512K	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
FM93CS56LN	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words		3.3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel			128X16	128	0 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified	15 ms	MICROWIRE	2048 bit	2.7 V			e0			.00001 Amp	9.817 mm
XC17S100APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	781216X1	781216	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			781216 bit	3 V			e0	30	225	.001 Amp	9.3599 mm
XC17S100APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	781216X1	781216	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			781216 bit	3 V			e0	30	225	.001 Amp	9.3599 mm
XC17S150APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1040096 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	1040096X1	1040096	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			1040096 bit	3 V			e0	30	225	.00005 Amp	9.3599 mm
XC17S150APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1040096 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	1040096X1	1040096	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			1040096 bit	3 V			e0	30	225	.00005 Amp	9.3599 mm
XC17S15APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	197696X1	197696	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			197696 bit	3 V			e0	30	225	.00005 Amp	9.3599 mm
XC17S15APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	197696X1	197696	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			197696 bit	3 V			e0	30	225	.00005 Amp	9.3599 mm
XC17S200APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	1335840X1	1335840	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			1335840 bit	3 V			e0	30	225	.001 Amp	9.3599 mm
XC17S200APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	1335840X1	1335840	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			1335840 bit	3 V			e0	30	225	.001 Amp	9.3599 mm
XC17S30APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	336768X1	336768	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			336768 bit	3 V			e0	30	225	.00005 Amp	9.3599 mm
XC17S30APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	336768X1	336768	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			336768 bit	3 V			e0	30	225	.00005 Amp	9.3599 mm
XC17S50APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	559200X1	559200	0 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			559200 bit	3 V			e0	30	225	.001 Amp	9.3599 mm
XC17S50APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	559200X1	559200	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			559200 bit	3 V			e0	30	225	.001 Amp	9.3599 mm
M24C32-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	4096 words		2.7		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			4KX8	4K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			e3			.000002 Amp	9.27 mm
24LC128-I/PG	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words		4.5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			16KX8	16K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS		e3			.000001 Amp	9.271 mm
24LC512-I/PG	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	65536 words		4.5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			64KX8	64K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3			.000001 Amp	9.271 mm
25LC128-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	16384 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			16KX8	16K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	131072 bit	2.5 V			e3			.000001 Amp	9.271 mm		5
25AA640A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	8192 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V			e3			.000001 Amp	9.271 mm		2.5
25LC640A-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	8192 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	125 Cel			8KX8	8K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V			e3			.000005 Amp	9.271 mm		5
24AA1026-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words		2.5		1.8/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V			e3			.000005 Amp	9.271 mm		2.5
24FC1026-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	1.8 V			e3			.000005 Amp	9.271 mm		2.5
PCA8581P/F6,112	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel		OPEN-DRAIN	128X8	128	-25 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDIP-T8		5.5 V	4.2 mm	10000 Write/Erase Cycles		7.62 mm	Not Qualified		I2C	1024 bit	4.5 V	10 YEAR OF DATA RETENTION		e4			.00001 Amp	9.5 mm		5
PCF85102C-2P/03,11	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e4			.0000035 Amp	9.5 mm
PCF85103C-2P/00,11	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e4			.0000035 Amp	9.5 mm
PCF85116-3P/01,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	20	2.54 mm	85 Cel			2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD	1010MMMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	4.2 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V			e4				9.5 mm
PCF8582C-2P/03,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e4			.0000035 Amp	9.5 mm
PCF8594C-2P/02,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	.8 mA	512 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel			512X8	512	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE	R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V			e4			.0000035 Amp	9.5 mm
PCF8598C-2P/02,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel			1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DMMR		DUAL		HARDWARE	R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	8192 bit	2.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE		e4			.00001 Amp	9.5 mm
CAT28C256L15	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	100	2.54 mm	70 Cel			32KX8	32K	0 Cel	NO	TIN			DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.00015 Amp	36.695 mm	150 ns	5	YES
11AA010-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	128 words		5	NO	2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V			e3			.000005 Amp	9.271 mm
11LC010-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	128 words		5	NO	3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	1-WIRE	1024 bit	2.5 V			e3			.000005 Amp	9.271 mm
AT17LV010A-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3		3.3/5	1	IN-LINE	DIP8,.3		EEPROMs		2.54 mm	85 Cel			1MX1	1M	-40 Cel		TIN LEAD			DUAL		HARDWARE	R-PDIP-T8	1	3.6 V	5.334 mm		10 MHz	7.62 mm	Not Qualified			1048576 bit	3 V	ALSO OPERATES AT 5V SUPPLY		e0				9.271 mm
AT17LV010-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1048576 words		3.3		3.3/5	1	IN-LINE	DIP8,.3		EEPROMs	90	2.54 mm	85 Cel			1MX1	1M	-40 Cel		TIN LEAD			DUAL		HARDWARE	R-PDIP-T8	1	3.6 V	5.334 mm	100000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified			1048576 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0			.0001 Amp	9.271 mm
BR24L02-W	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			256X8	256	-40 Cel		Tin/Copper (Sn/Cu)	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	3.7 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e2	10	260	.000002 Amp	9.3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.